Add to ORKGThe first 10 Gbit/s long-wavelength monolithic integrated photoreceiver grown on GaAs substrate has been fabricated using a 0.3 mu m gate length AlGaAs/GaAs HEMT process. At a wavelength of 1.3 mu m the integrated InGaAs MSM photodiode has a DC responsivity of 0.34 A/W. The photoreceiver bandwidth is 7.1 GHz and its sensitivity is better than -14.7 dBm (BER=10-9
For future long-haul optical fiber telecommunication systems, the development of monolithically inte...
We report, for the first time, the realization of a long-wavelength monolithically integrated MSM-FE...
A photoreceiver based on a metal-semiconductor-metal (MSM) photodiode and AlGaAs/GaAs HEMTs is prese...
The first 20 Gbit/s 1.3-1.55 mu m wavelength monolithic integrated photoreceiver grown on GaAs subst...
The first 20Gbit/s 1.3-1.55mu m wavelength monolithic integrated photoreceiver grown on GaAs substra...
1.3-1.55 mu m wavelength 20 Gbit/s MSM-HEMT and 10 Gbit/s PIN-HEMT photoreceivers have been monolith...
A 10 Gibt/s monolithic integrated optoelectronic receiver has been fabricated with a metalsemiconduc...
The first 1.3 μm monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode a...
A novel monolithically integrated photoreceiver for 10Gbit/s long-haul optoelectronic transmission s...
A 0.85 mu m wavelength monolithic integrated optoelectronic receiver consisting of a GaAs MSM photod...
A monolithic integrated optoelectronic receiver for a wavelength of 1.55 mu m consisting of a GaInAs...
40 Gbit/s 1. 55 mu m photoreceivers were manufactured using GaAs-based HEMT distributed amplifiers. ...
The first 1.3 mym monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode and A...
An 8.2 GHz bandwidth monolithic optoelectronic receiver consisting of an MSM photodiode, a transimpe...
Compact monolithically integrated narrow-band photoreceivers with a high responsivity at millimeter-...
For future long-haul optical fiber telecommunication systems, the development of monolithically inte...
We report, for the first time, the realization of a long-wavelength monolithically integrated MSM-FE...
A photoreceiver based on a metal-semiconductor-metal (MSM) photodiode and AlGaAs/GaAs HEMTs is prese...
The first 20 Gbit/s 1.3-1.55 mu m wavelength monolithic integrated photoreceiver grown on GaAs subst...
The first 20Gbit/s 1.3-1.55mu m wavelength monolithic integrated photoreceiver grown on GaAs substra...
1.3-1.55 mu m wavelength 20 Gbit/s MSM-HEMT and 10 Gbit/s PIN-HEMT photoreceivers have been monolith...
A 10 Gibt/s monolithic integrated optoelectronic receiver has been fabricated with a metalsemiconduc...
The first 1.3 μm monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode a...
A novel monolithically integrated photoreceiver for 10Gbit/s long-haul optoelectronic transmission s...
A 0.85 mu m wavelength monolithic integrated optoelectronic receiver consisting of a GaAs MSM photod...
A monolithic integrated optoelectronic receiver for a wavelength of 1.55 mu m consisting of a GaInAs...
40 Gbit/s 1. 55 mu m photoreceivers were manufactured using GaAs-based HEMT distributed amplifiers. ...
The first 1.3 mym monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode and A...
An 8.2 GHz bandwidth monolithic optoelectronic receiver consisting of an MSM photodiode, a transimpe...
Compact monolithically integrated narrow-band photoreceivers with a high responsivity at millimeter-...
For future long-haul optical fiber telecommunication systems, the development of monolithically inte...
We report, for the first time, the realization of a long-wavelength monolithically integrated MSM-FE...
A photoreceiver based on a metal-semiconductor-metal (MSM) photodiode and AlGaAs/GaAs HEMTs is prese...