20 Gbit/s fully integrated MSM-photodiode AlGaAs/GaAs-HEMT optoelectronic receiver
- Hurm, V.
- Benz, W.
- Berroth, M.
- Bronner, W.
- Kaufel, G.
- Köhler, K.
- Ludwig, M.
- Olander, E.
- Raynor, B.
- Rosenzweig, J.
DOIAbstract
A 0.85 mu m wavelength monolithic integrated optoelectronic receiver consisting of a GaAs MSM photodiode and a multi-stage AlGaAs-GaAs HEMT amplifier has been fabricated. The transimpedance is 12.6 k Omega (into 50 Omega W) and the sensitivity better than 14.7 dBm (at 12.5 Gbit/s, BER=10-9). The bandwidth of 13.0 GHz implies suitability for transmission rates up to 20 Gbit/s
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