SOI-CMOS technology with monolithically integrated active and passive RF devices on high resistivity SIMOX substrates

A silicon-on-insulator (SOI) CMOS technology has been developed for microwave applications up to 5 GHz. The technology is based on a 0.8 mu m CMOS VLSI-process on high resistivity subtrates using Ti salicide and metal reinforced gates. Special RF NMOS and PMOS FET's with an effective channel length of 0.3 mu m and 0.25 mu m respectively give maximum frequencies of operation fmax of 24.3 GHz (NMOS) and 11.8 GHz (PMOS). Passive RF devices like metal-insulator-metal (MIM) capacitors with 30...80 nF/cm2, planar inductors with a quality factor up to 12 and coplanar waveguides with low loss