Future high-bit rate optical communication networks operating at bit rates above 40 Gbit/s and, in particular, wireless cellular mobile communication systems based on an optical distribution network necessitate the availability of accordingly fast, but also highly efficient photodetectors especially for the 1.55 mu m wavelength region. We present an InP based pin-photodetector with an integrated passive optical waveguide using evanescent field coupling for operation in the wavelength around of 1.55 mu m
We analyze waveguide InP photodetectors for millimeter wave applications. We start with the PIN wave...
This article describes the fabrication and characterization of a waveguide pin-photodetector\u3cbr/\...
Photoreceivers based on InP are becoming increasingly important for 40 Gbit/s telecommunication syst...
Evanescently coupled, waveguide integrated photodiodes were fabricated on InP. The device design is ...
The paper reviews key characteristics of ultra fast evanescently coupled waveguide-integrated p-i-n ...
40 Gbit/s photodetectors require high bandwidth at high power levels, as supplied by waveguide-integ...
A waveguide photodetector based on semi-insulating indium phosphide (InP) was de-signed and fabricat...
We demonstrate a waveguide integrated pin-photodetector chip for 100Gbaud applications operating fro...
For future long-haul communication systems operating at bitrates of 40 Gbit/s and for broad-band mob...
The development of high speed optical communication networks operating at bit rates above 40 Gbit/s ...
A waveguide photodetector (PD) based on semi-insulating (SI) indium phosphide (InP) was simulated, d...
High-speed, high-power photodetectors are required in 40 Gbit/s front-ends as well as for optic/mill...
A low-capacitance waveguide-integrated photodiode on InP with a minimized absorber length is present...
This article describes the fabrication and characterization of a waveguide pin-photodetector(WGPD) b...
This article describes the fabrication and characterization of a waveguide pin-photodetector(WGPD) b...
We analyze waveguide InP photodetectors for millimeter wave applications. We start with the PIN wave...
This article describes the fabrication and characterization of a waveguide pin-photodetector\u3cbr/\...
Photoreceivers based on InP are becoming increasingly important for 40 Gbit/s telecommunication syst...
Evanescently coupled, waveguide integrated photodiodes were fabricated on InP. The device design is ...
The paper reviews key characteristics of ultra fast evanescently coupled waveguide-integrated p-i-n ...
40 Gbit/s photodetectors require high bandwidth at high power levels, as supplied by waveguide-integ...
A waveguide photodetector based on semi-insulating indium phosphide (InP) was de-signed and fabricat...
We demonstrate a waveguide integrated pin-photodetector chip for 100Gbaud applications operating fro...
For future long-haul communication systems operating at bitrates of 40 Gbit/s and for broad-band mob...
The development of high speed optical communication networks operating at bit rates above 40 Gbit/s ...
A waveguide photodetector (PD) based on semi-insulating (SI) indium phosphide (InP) was simulated, d...
High-speed, high-power photodetectors are required in 40 Gbit/s front-ends as well as for optic/mill...
A low-capacitance waveguide-integrated photodiode on InP with a minimized absorber length is present...
This article describes the fabrication and characterization of a waveguide pin-photodetector(WGPD) b...
This article describes the fabrication and characterization of a waveguide pin-photodetector(WGPD) b...
We analyze waveguide InP photodetectors for millimeter wave applications. We start with the PIN wave...
This article describes the fabrication and characterization of a waveguide pin-photodetector\u3cbr/\...
Photoreceivers based on InP are becoming increasingly important for 40 Gbit/s telecommunication syst...