Add to ORKGThe performance of InP-based dual-gate HEMTs in a cascode configuration is demonstrated by the realization of a number of coplanar amplifiers. Three single-stage dual-gate amplifiers with a stable insertion gain of 16.4, 12.4 and 7.5 dB at respectively 58.5, 93.5 and 111 GHz are successfully realized. For a distributed amplifier using meandered coplanar lines a gain of 8.8 dB with a 3-dB bandwidth of 97 GHz is obtained
In this paper we present the design and realization of a high-power amplifier in grounded coplanar t...
Distributed amplifiers were fabricated successfully with a gain of 8 dB plusminus 1 dB in the freque...
This paper presents the design and performance of 110-GHz low noise amplifier MMICs, based on coplan...
In this paper, the performance of both GaAs and InP-based 0.15um dual-gate HEMTs in a cascode config...
A two-stage monolithic W-band power amplifier has been developed, using 0.15 mu AlGa.As/InGaAs/GaAs ...
Compact high-gain W-band multistage amplifier MMIC's have been developed in coplanar technology usin...
High performances have been achieved at W-band with a 2-stage 0.1 um gate-length InGaAs/InAlAs/InP L...
A 94 GHz low-noise amplifier MMIC (LNA) has been developed, based on a coplanar technology utilizing...
Abstract—In this paper, we report on the development of W-band monolithic microwave integrated circu...
A two-stage D-band amplifier MMIC with 12 dB gain at 148 GHz has been developed, using a 0.15 mu m A...
A number of W-band high performance and highly integrated MMICs in coplanar technology have been dev...
By using a coplanar layout, incorporating transmission lines loaded with lumped shunt MIM-capacitors...
InP HEMT transistors using 70-nm gate length have been fabricated and modeled. Two different epitaxi...
InP-based HEMTs have to date demonstrated the best high frequency characteristics of any transistor,...
A three-stage V-band amplifier using only coplanar waveguide technology has been realized in a 0.3 u...
In this paper we present the design and realization of a high-power amplifier in grounded coplanar t...
Distributed amplifiers were fabricated successfully with a gain of 8 dB plusminus 1 dB in the freque...
This paper presents the design and performance of 110-GHz low noise amplifier MMICs, based on coplan...
In this paper, the performance of both GaAs and InP-based 0.15um dual-gate HEMTs in a cascode config...
A two-stage monolithic W-band power amplifier has been developed, using 0.15 mu AlGa.As/InGaAs/GaAs ...
Compact high-gain W-band multistage amplifier MMIC's have been developed in coplanar technology usin...
High performances have been achieved at W-band with a 2-stage 0.1 um gate-length InGaAs/InAlAs/InP L...
A 94 GHz low-noise amplifier MMIC (LNA) has been developed, based on a coplanar technology utilizing...
Abstract—In this paper, we report on the development of W-band monolithic microwave integrated circu...
A two-stage D-band amplifier MMIC with 12 dB gain at 148 GHz has been developed, using a 0.15 mu m A...
A number of W-band high performance and highly integrated MMICs in coplanar technology have been dev...
By using a coplanar layout, incorporating transmission lines loaded with lumped shunt MIM-capacitors...
InP HEMT transistors using 70-nm gate length have been fabricated and modeled. Two different epitaxi...
InP-based HEMTs have to date demonstrated the best high frequency characteristics of any transistor,...
A three-stage V-band amplifier using only coplanar waveguide technology has been realized in a 0.3 u...
In this paper we present the design and realization of a high-power amplifier in grounded coplanar t...
Distributed amplifiers were fabricated successfully with a gain of 8 dB plusminus 1 dB in the freque...
This paper presents the design and performance of 110-GHz low noise amplifier MMICs, based on coplan...