Add to ORKGUsing our 0.2 mu m AlGaAs/GaAs/AlGaAs quantum well HEMT technology, we have designed, manufactured and characterized different ICs for optoelectronic data transmission systems. In this paper we describe several chips for a 40 Gbit/s system. The results presented here have been obtained on wafer with a 50 Omega coplanar test system
A high speed modulator driver has been developed and realised using GaAs P-HEMT technology. The driv...
As tele- and data-communications develop rapidly, optic-fiber networks are widely implemented and th...
A monolithically integrated 2 : 1 multiplexer and laser diode driver was developed, using AlGaAs qua...
Using our 0.2 mu m AlGaAs/GaAs/AlGaAs quantum well HEMT technology, we have designed a chip set for ...
Using our 0.2 mu m AlGaAs/GaAs/AlGaAs quantum well HEMT technology, we have designed, manufactured a...
This contribution presents a new set of digital ICs dedicated to optical fibre links, realised using...
A set of ICs has been developed for high-speed data links at data rates above 10 Gbit/s. A recessed ...
A decision IC for optical data links at bit rates of 20-40 Gbit/s has been realised by using 0.2mu m...
HEMT devices exhibit excellent figures of merit for high frequency operation. Therefore they are str...
During the past 5 years numerous mixed signal circuits have been designed, processed, and characteri...
During the past five years numerous mixed signal integrated circuits (IC's) have been designed, proc...
Within the scope of the project a complete chip set [1] for optoelectronic 40 Gbit/s ETDM data trans...
A 36.5 GHz bandwidth 1.55mu m wavelength PIN-HEMT photoreceiver with a distributed amplifier has bee...
40 Gbit/s 1. 55 mu m photoreceivers were manufactured using GaAs-based HEMT distributed amplifiers. ...
Abstract- We have developed a number of products for 40 Gbps applications, including InP-based monol...
A high speed modulator driver has been developed and realised using GaAs P-HEMT technology. The driv...
As tele- and data-communications develop rapidly, optic-fiber networks are widely implemented and th...
A monolithically integrated 2 : 1 multiplexer and laser diode driver was developed, using AlGaAs qua...
Using our 0.2 mu m AlGaAs/GaAs/AlGaAs quantum well HEMT technology, we have designed a chip set for ...
Using our 0.2 mu m AlGaAs/GaAs/AlGaAs quantum well HEMT technology, we have designed, manufactured a...
This contribution presents a new set of digital ICs dedicated to optical fibre links, realised using...
A set of ICs has been developed for high-speed data links at data rates above 10 Gbit/s. A recessed ...
A decision IC for optical data links at bit rates of 20-40 Gbit/s has been realised by using 0.2mu m...
HEMT devices exhibit excellent figures of merit for high frequency operation. Therefore they are str...
During the past 5 years numerous mixed signal circuits have been designed, processed, and characteri...
During the past five years numerous mixed signal integrated circuits (IC's) have been designed, proc...
Within the scope of the project a complete chip set [1] for optoelectronic 40 Gbit/s ETDM data trans...
A 36.5 GHz bandwidth 1.55mu m wavelength PIN-HEMT photoreceiver with a distributed amplifier has bee...
40 Gbit/s 1. 55 mu m photoreceivers were manufactured using GaAs-based HEMT distributed amplifiers. ...
Abstract- We have developed a number of products for 40 Gbps applications, including InP-based monol...
A high speed modulator driver has been developed and realised using GaAs P-HEMT technology. The driv...
As tele- and data-communications develop rapidly, optic-fiber networks are widely implemented and th...
A monolithically integrated 2 : 1 multiplexer and laser diode driver was developed, using AlGaAs qua...