In-situ-Plasmavorbehandlung zur TEOS-Siliziumoxid-Abscheidung

A process for controlled deposition of silicon oxide, as dielectric (40, 41) between raised circuit lines (10, 11, 13) on substrates (20, 21), involves (a) using an inert plasma (preferably of helium) for physical modification of the surfaces (20a) to be coated, prior to gas phase deposition of the silicon oxide; and (b) adding a small amount of oxide-etching gas (preferably a fluorine-containing gas) to the plasma so that the surfaces (20a) are simultaneously affected chemically. Preferably, the silicon oxide is deposited by CVD from an atmosphere containing TEOS (tetraethyl orthosilicate) and oxygen or ozone. USE - For production of a planarising inter-metal dielectric (IMD) for multilevel wiring by means of sub-atmospheric chemical vapour deposition (SACVD). ADVANTAGE - The process suppresses deposition selectivity of the surface to be coated to permit production of uniform SiO2 film thickness especially in reduced time