MBE regrowth of InP on patterned surfaces and its application potential for optoelectronic devices

Paraskevopoulos, A.
Kunzel, H.
Bottcher, J.
Urmann, G.
Hensel, H.J.
Bozbek, A.

Publication date

January 1997

DOI

10.1109/ICIPRM.1997.600030

Abstract

High-quality InP material was grown with solid source molecular beam epitaxy (SSMBE) using a GaP source. Dry- as well as wet-etched corrugated quaternary surfaces (DFB-gratings) were successfully regrown with InP, fully planarized final surfaces were obtained in each case. Finally, InP regrowth on mesa structures demonstrates favourable conditions for butt-coupling integration schemes

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MBE regrowth of InP on patterned surfaces and its application potential for optoelectronic devices

Abstract

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MBE regrowth of InP on patterned surfaces and its application potential for optoelectronic devices

Abstract

Extracted data

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