Deposition of c-BN films by DC magnetron sputtering

New results of the deposition of cubic boron nitride (c-BN)films by use of DC magnetron sputtering will be presented. This technique is of great interest for industrial applications, because of its high growth rates and upscaling potential. Boron carbide was used as target material with a suitable electrical conductivity for DC sputtering. The target as well as the substrate holder were connected to DC power. In the experimental serup we used tile unbalanced magnetron mode (UBM) attaind with a magnetic coil surrounding the substrate table. A c-BN deposition process was developed based on a parameter transfer from a RF diode system. The c-BN cement of the films will be discussed in relation to the different process parameters. Important process parameters for the formation of the cubic phase were the ion current ar the substrate table and the insulting ratio of ions to neutrals. Nearly single phase c-BN films were deposited on silicon and steel substrates