GaAs-based pin-HEMT photoreceivers for optical microwave and millimeter-wave transmission at 1.55 mu m

40 GHz broadband optical receiver combining a multimode waveguide photodiode flip-chip mounted on a GaAs-based HEMT distributed amplifier

Leven, A.
Hurm, V.
Bronner, W.
Köhler, K.
Walcher, H.
Kiefer, R.
Fleißner, J.
Rosenzweig, J.
Schlechtweg, M.

January 2000

A 40 GHz bandwidth, 1.55 mu m wavelength photoreceiver for high-speed digital and microwave-via-fibe...

20 Gbit/s long wavelength monolithic integrated photoreceiver grown on GaAs

Hurm, V.
Benz, W.
Bronner, W.
Fink, T.
Kaufel, G.
Köhler, K.
Lao, Z.
Ludwig, M.
Raynor, B.
Rosenzweig, J.
Schlechtweg, M.
Windscheif, J.

January 1997

The first 20Gbit/s 1.3-1.55mu m wavelength monolithic integrated photoreceiver grown on GaAs substra...

Monolithic Integration of Long Wavelength Photodetectors and High Electron Mobility Transistors on Metamorphic Gallium Arsenide Substrates

Jang, Jae-Hyung

January 10000

109 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2002.Long wavelength In0.53Ga0.47A...

Monolithic and hybrid integrated GaAs-based photoreceivers for 40 Gbit/s optical communication

Hurm, V.
Leven, A.
Benz, W.
Berking, M.
Bronner, W.
Hülsmann, A.
Köhler, K.
Ludwig, M.
Massler, H.
Rosenzweig, J.
Schlechtweg, M.
Sohn, J.
Walcher, H.
Weimann, G.

January 2000

40 Gbit/s 1. 55 mu m photoreceivers were manufactured using GaAs-based HEMT distributed amplifiers. ...

40 Gbit/s 1.55 mu m monolithic integrated GaAs-based PIN-HEMT photoreceiver

Hurm, V.
Benz, W.
Bronner, W.
Hülsmann, A.
Jakobus, T.
Köhler, K.
Leven, A.
Ludwig, M.
Raynor, B.
Rosenzweig, J.
Schlechtweg, M.
Thiede, A.

January 1998

A 36.5 GHz bandwidth 1.55mu m wavelength PIN-HEMT photoreceiver with a distributed amplifier has bee...

Long wavelength MSM-HEMT and PIN-HEMT photoreceivers grown on GaAs

Hurm, V.
Benz, W.
Bronner, W.
Fink, T.
Jakobus, T.
Kaufel, G.
Köhler, K.
Lao, Z.
Leven, A.
Ludwig, M.
Moglestue, C.
Raynor, B.
Rosenzweig, J.
Schlechtweg, M.
Thiede, A.
Weisser, S.

January 1997

1.3-1.55 mu m wavelength 20 Gbit/s MSM-HEMT and 10 Gbit/s PIN-HEMT photoreceivers have been monolith...

Design of narrow-band photoreceivers by means of the photodiode intrinsic conductance

Leven, A.
Hurm, V.
Reuter, R.
Rosenzweig, J.

January 2001

The photodiode intrinsic conductance is a versatile parameter for designing photoreceivers used in l...

Narrow-band photoreceiver at 10 GHz with a flip-chip mounted 1.55 µm waveguide photodiode

Sohn, J.
Leven, A.
Hurm, V.
Walcher, H.
Rosenzweig, J.
Schlechtweg, M.

January 2002

Narrow-band photoreceivers at 10 GHz were manufactured using GaAs-based pseudomorphic HEMT (pHEMT) a...

Monolithic pin-HEMT 1.55 mu m photoreceiver on InP with 27 GHz bandwidth

Umbach, A.
Waasen, S. van
Auer, U.
Bach, H.-G.
Bertenburg, R.M.
Breuer, V.
Ebert, W.
Janssen, G.
Mekonnen, G.G.
Passenberg, W.
Schlaak, W.
Schramm, C.
Seeger, A.
Tegude, F.-J.
Unterborsch, G.

January 1996

A monolithically integrated photoreceiver is presented. Based on a new integration concept comprisin...

High-speed long-wavelength monolithic integrated photoreceivers grown on GaAs

Hurm, V.
Benz, W.
Bronner, W.
Fink, T.
Köhler, K.
Lao, Z.
Ludwig, M.
Raynor, B.
Rosenzweig, J.
Windscheif, J.

January 1997

The first 20 Gbit/s 1.3-1.55 mu m wavelength monolithic integrated photoreceiver grown on GaAs subst...

Millimeter-wave long-wavelength integrated optical receivers grown on GaAs

Baeyens, Y.
Leven, A.
Bronner, W.
Hurm, V.
Reuter, R.
Köhler, K.
Rosenzweig, J.
Schlechtweg, M.

January 1999

Compact monolithically integrated narrow-band photoreceivers with a high responsivity at millimeter-...

High conversion gain flip-chip integrated photoreceivers for broad-band (40 Gbit/s) and narrow-band (10 GHz) applications

Sohn, J.
Leven, A.
Hurm, V.
Walcher, H.
Benz, W.
Ludwig, M.
Kuri, M.
Massler, H.
Bronner, W.
Hülsmann, A.
Köhler, K.
Rosenzweig, J.
Schlechtweg, M.

January 2002

High conversion gain photoreceivers for broad-band (40 Gbit/s) and narrow-band (10 GHz) applications...

Monolithic pin-HEMT 1.55 μm Photoreceiver on InP with 27GHz Bandwidth

Umbach, A.
van Waasen, Stefan
Schlaak, W.
Schramm, Christian
Seeger, A.
Wolfram, P.
Tegude, F.-J.
Unterbörsch, G.
Auer, U.
Bach, H.-G.
Bertenburg, R. M.
Breuer, V.
Ebert, W.
Janßen, G.
Mekonnen, G. G.
Passenberg, W.

January 1996

A monolithically integrated photoreceiver is presented. Based on a new integration concept comprisin...

A high-speed monolithically-integrated photoreceiver for long-wavelength communication systems

Fay, Patrick John

For future long-haul optical fiber telecommunication systems, the development of monolithically inte...

Technology of InP-based 1.55- mu m ultrafast OEMMICs: 40-Gbit/s broad-band and 38/60-GHz narrow-band photoreceivers

Umbach, A.
Engel, T.
Bach, H.-G.
Waasen, S. van
Droge, E.
Strittmatter, A.
Ebert, W.
Passenberg, W.
Steingrüber, R.
Schlaak, W.
Mekonnen, G.G.
Unterborsch, G.
Bimberg, D.

January 1999

For future long-haul communication systems operating at bitrates of 40 Gbit/s and for broad-band mob...

40 GHz broadband optical receiver combining a multimode waveguide photodiode flip-chip mounted on a GaAs-based HEMT distributed amplifier

Leven, A.
Hurm, V.
Bronner, W.
Köhler, K.
Walcher, H.
Kiefer, R.
Fleißner, J.
Rosenzweig, J.
Schlechtweg, M.

January 2000

A 40 GHz bandwidth, 1.55 mu m wavelength photoreceiver for high-speed digital and microwave-via-fibe...

20 Gbit/s long wavelength monolithic integrated photoreceiver grown on GaAs

Hurm, V.
Benz, W.
Bronner, W.
Fink, T.
Kaufel, G.
Köhler, K.
Lao, Z.
Ludwig, M.
Raynor, B.
Rosenzweig, J.
Schlechtweg, M.
Windscheif, J.

January 1997

The first 20Gbit/s 1.3-1.55mu m wavelength monolithic integrated photoreceiver grown on GaAs substra...

Monolithic Integration of Long Wavelength Photodetectors and High Electron Mobility Transistors on Metamorphic Gallium Arsenide Substrates

Jang, Jae-Hyung

January 10000

109 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2002.Long wavelength In0.53Ga0.47A...

Monolithic and hybrid integrated GaAs-based photoreceivers for 40 Gbit/s optical communication

Hurm, V.
Leven, A.
Benz, W.
Berking, M.
Bronner, W.
Hülsmann, A.
Köhler, K.
Ludwig, M.
Massler, H.
Rosenzweig, J.
Schlechtweg, M.
Sohn, J.
Walcher, H.
Weimann, G.

January 2000

40 Gbit/s 1. 55 mu m photoreceivers were manufactured using GaAs-based HEMT distributed amplifiers. ...

40 Gbit/s 1.55 mu m monolithic integrated GaAs-based PIN-HEMT photoreceiver

Hurm, V.
Benz, W.
Bronner, W.
Hülsmann, A.
Jakobus, T.
Köhler, K.
Leven, A.
Ludwig, M.
Raynor, B.
Rosenzweig, J.
Schlechtweg, M.
Thiede, A.

January 1998

A 36.5 GHz bandwidth 1.55mu m wavelength PIN-HEMT photoreceiver with a distributed amplifier has bee...

Long wavelength MSM-HEMT and PIN-HEMT photoreceivers grown on GaAs

Hurm, V.
Benz, W.
Bronner, W.
Fink, T.
Jakobus, T.
Kaufel, G.
Köhler, K.
Lao, Z.
Leven, A.
Ludwig, M.
Moglestue, C.
Raynor, B.
Rosenzweig, J.
Schlechtweg, M.
Thiede, A.
Weisser, S.

January 1997

1.3-1.55 mu m wavelength 20 Gbit/s MSM-HEMT and 10 Gbit/s PIN-HEMT photoreceivers have been monolith...

Design of narrow-band photoreceivers by means of the photodiode intrinsic conductance

Leven, A.
Hurm, V.
Reuter, R.
Rosenzweig, J.

January 2001

The photodiode intrinsic conductance is a versatile parameter for designing photoreceivers used in l...

Narrow-band photoreceiver at 10 GHz with a flip-chip mounted 1.55 µm waveguide photodiode

Sohn, J.
Leven, A.
Hurm, V.
Walcher, H.
Rosenzweig, J.
Schlechtweg, M.

January 2002

Narrow-band photoreceivers at 10 GHz were manufactured using GaAs-based pseudomorphic HEMT (pHEMT) a...

Monolithic pin-HEMT 1.55 mu m photoreceiver on InP with 27 GHz bandwidth

Umbach, A.
Waasen, S. van
Auer, U.
Bach, H.-G.
Bertenburg, R.M.
Breuer, V.
Ebert, W.
Janssen, G.
Mekonnen, G.G.
Passenberg, W.
Schlaak, W.
Schramm, C.
Seeger, A.
Tegude, F.-J.
Unterborsch, G.

January 1996

A monolithically integrated photoreceiver is presented. Based on a new integration concept comprisin...

High-speed long-wavelength monolithic integrated photoreceivers grown on GaAs

Hurm, V.
Benz, W.
Bronner, W.
Fink, T.
Köhler, K.
Lao, Z.
Ludwig, M.
Raynor, B.
Rosenzweig, J.
Windscheif, J.

January 1997

The first 20 Gbit/s 1.3-1.55 mu m wavelength monolithic integrated photoreceiver grown on GaAs subst...

Millimeter-wave long-wavelength integrated optical receivers grown on GaAs

Baeyens, Y.
Leven, A.
Bronner, W.
Hurm, V.
Reuter, R.
Köhler, K.
Rosenzweig, J.
Schlechtweg, M.

January 1999

Compact monolithically integrated narrow-band photoreceivers with a high responsivity at millimeter-...

High conversion gain flip-chip integrated photoreceivers for broad-band (40 Gbit/s) and narrow-band (10 GHz) applications

Sohn, J.
Leven, A.
Hurm, V.
Walcher, H.
Benz, W.
Ludwig, M.
Kuri, M.
Massler, H.
Bronner, W.
Hülsmann, A.
Köhler, K.
Rosenzweig, J.
Schlechtweg, M.

January 2002

High conversion gain photoreceivers for broad-band (40 Gbit/s) and narrow-band (10 GHz) applications...

Monolithic pin-HEMT 1.55 μm Photoreceiver on InP with 27GHz Bandwidth

Umbach, A.
van Waasen, Stefan
Schlaak, W.
Schramm, Christian
Seeger, A.
Wolfram, P.
Tegude, F.-J.
Unterbörsch, G.
Auer, U.
Bach, H.-G.
Bertenburg, R. M.
Breuer, V.
Ebert, W.
Janßen, G.
Mekonnen, G. G.
Passenberg, W.

January 1996

A monolithically integrated photoreceiver is presented. Based on a new integration concept comprisin...

A high-speed monolithically-integrated photoreceiver for long-wavelength communication systems

Fay, Patrick John

For future long-haul optical fiber telecommunication systems, the development of monolithically inte...

Technology of InP-based 1.55- mu m ultrafast OEMMICs: 40-Gbit/s broad-band and 38/60-GHz narrow-band photoreceivers

Umbach, A.
Engel, T.
Bach, H.-G.
Waasen, S. van
Droge, E.
Strittmatter, A.
Ebert, W.
Passenberg, W.
Steingrüber, R.
Schlaak, W.
Mekonnen, G.G.
Unterborsch, G.
Bimberg, D.

January 1999

For future long-haul communication systems operating at bitrates of 40 Gbit/s and for broad-band mob...

40 GHz broadband optical receiver combining a multimode waveguide photodiode flip-chip mounted on a GaAs-based HEMT distributed amplifier

Leven, A.
Hurm, V.
Bronner, W.
Köhler, K.
Walcher, H.
Kiefer, R.
Fleißner, J.
Rosenzweig, J.
Schlechtweg, M.

January 2000

A 40 GHz bandwidth, 1.55 mu m wavelength photoreceiver for high-speed digital and microwave-via-fibe...

20 Gbit/s long wavelength monolithic integrated photoreceiver grown on GaAs

Hurm, V.
Benz, W.
Bronner, W.
Fink, T.
Kaufel, G.
Köhler, K.
Lao, Z.
Ludwig, M.
Raynor, B.
Rosenzweig, J.
Schlechtweg, M.
Windscheif, J.

January 1997

The first 20Gbit/s 1.3-1.55mu m wavelength monolithic integrated photoreceiver grown on GaAs substra...

Monolithic Integration of Long Wavelength Photodetectors and High Electron Mobility Transistors on Metamorphic Gallium Arsenide Substrates

Jang, Jae-Hyung

January 10000

109 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2002.Long wavelength In0.53Ga0.47A...

GaAs-based pin-HEMT photoreceivers for optical microwave and millimeter-wave transmission at 1.55 mu m

Abstract

Extracted data

GaAs-based pin-HEMT photoreceivers for optical microwave and millimeter-wave transmission at 1.55 mu m

Abstract

Extracted data

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