LSI capability demonstration of an 0.15 mu m - 0.3 mu m GaAs HEMT and PM-HEMT 3 level metallization E/D-Technology for mixed signal circuits

A 16 x 16 bit parallel multiplier based on a 26 k sea-of-gate has been fabricated successfully to demonstrate the LSI capability of our mixed signal IC technology including pseudomorphic T-gate HEMTs for high speed as. well as three levels of gold metallization for high integration complexity. To prove the high speed performance a digital dynamic frequency divider operating in a frequency band from about 36 GHz up to almost 60 GHz has been realised