Millimeter wave InP HEMT MMIC technology. Thermal stability and performace

InP-based HEMTs have to date demonstrated the best high frequency characteristics of any transistor, including the highest f(t) and f(max), the lowest noise figure and the highest efficiencies for power amplification. These characteristics make them the best technology choice for several advanced systems for space and military applications, such as smart munitions, passive imaging and radiometry, and commercial applications such as automotive radar. Unfortunately, the relative immaturity of InP-based HEMT processing technology, in comparison to GaAs PHEMTs, limits its introduction into systems. Consequently, much effort is being directed towards the development of reliability and manufacturability of the InP-based HEMT MMICs. Here, we will demonstrate the fabrication and the design of W-band high gain passivated 0. 1 5 mu m double side doped InAlAs/InGaAs HEMTs, with a high uniformity and yield over 2'' InP substrates. By using this technology, a single stage amplifier with 10.2 dB gai n at 88 GHz and a distributed amplifier with 11 dB gain and 89 GHz bandwidth were demonstrated. Furthermore, the robustness of our InP-based HEMTs MMICs technology will be demonstrated by high temperature stress