Novel microstructuring technologies in silicon

Two microstructuring processes are described in the paper: A high performance RIE process (STS Advanced Silicon Etch), which is in many cases a benefical replacement for conventional, anisotropic silicon etch techniques. Furthermore a technology using porous silicon as sacrificial layer in a surface micromachining process. Porous silicon has some favourable properties, compared to other sacrificial layers as layer thickness up to 100mu m. The capabilities of these processes are illustrated by several of MEMS applications carried out at the Fraunhofer Institute for Solid State Technology