Sputter source comprising a linear hollow cathode, an anode, a suitable power supply, an inflow device for the inert gas flow and a substrate, whereby at least one linear hollow cathode (1) is provided, consisting of planar targets (2) arranged in parallel and of identical or approximately identical size, so that apertures on the substrate side and apertures on the opposite side are created to feed the inert gas and end walls (4) are provided at the apertures on the end sides (6), said end walls (4) being electrically insulated in relation to targets (2) and the anode (9)
The process comprises immobilizing a substrate using a substrate holder on a rotary plate, and depos...
The magnetron sputter source is used in HV and UHV coating systems and is primarily employed in the ...
Plasma-assisted growth of thin films is a well-established method for both applied and ba-sic resear...
In a process for coating substrates by gas flow sputtering using a hollow cathode glow discharge in ...
The invention relates to a device for high-velocity gas flow sputtering, said device consisting of a...
EP 2287884 A2 UPAB: 20110307 NOVELTY - The gas flow sputter source has a hollow cathode (2) with an ...
DE 10129313 C UPAB: 20021209 NOVELTY - Sputtering process comprises: activating the substrate surfac...
NOVELTY - A substrate is coated with at least partially crystalline aluminum oxide by hollow cathode...
The apparatus includes a vacuum chamber (1), at least one sputter source (2) with at least one targe...
The sputtering apparatus for coating substrates by the low-pressure glow discharge process includes ...
The source has a hollow cathode (1) comprising an active surface (2) and a passive surface (3) that ...
An inert-gas plasma is produced by means of a glow discharge of a hollow cathode (2) in vacuum, and ...
The large-scale cathode (1) for a magnetron sputtering within a vacuum chamber, comprises a target, ...
DE 19958643 C UPAB: 20010522 NOVELTY - Apparatus for coating an object (3) comprises a vacuum chambe...
A second plasma is generated at the second electrode in a part of the vacuum region (2) located outs...
The process comprises immobilizing a substrate using a substrate holder on a rotary plate, and depos...
The magnetron sputter source is used in HV and UHV coating systems and is primarily employed in the ...
Plasma-assisted growth of thin films is a well-established method for both applied and ba-sic resear...
In a process for coating substrates by gas flow sputtering using a hollow cathode glow discharge in ...
The invention relates to a device for high-velocity gas flow sputtering, said device consisting of a...
EP 2287884 A2 UPAB: 20110307 NOVELTY - The gas flow sputter source has a hollow cathode (2) with an ...
DE 10129313 C UPAB: 20021209 NOVELTY - Sputtering process comprises: activating the substrate surfac...
NOVELTY - A substrate is coated with at least partially crystalline aluminum oxide by hollow cathode...
The apparatus includes a vacuum chamber (1), at least one sputter source (2) with at least one targe...
The sputtering apparatus for coating substrates by the low-pressure glow discharge process includes ...
The source has a hollow cathode (1) comprising an active surface (2) and a passive surface (3) that ...
An inert-gas plasma is produced by means of a glow discharge of a hollow cathode (2) in vacuum, and ...
The large-scale cathode (1) for a magnetron sputtering within a vacuum chamber, comprises a target, ...
DE 19958643 C UPAB: 20010522 NOVELTY - Apparatus for coating an object (3) comprises a vacuum chambe...
A second plasma is generated at the second electrode in a part of the vacuum region (2) located outs...
The process comprises immobilizing a substrate using a substrate holder on a rotary plate, and depos...
The magnetron sputter source is used in HV and UHV coating systems and is primarily employed in the ...
Plasma-assisted growth of thin films is a well-established method for both applied and ba-sic resear...