Single and multilayer surface gratings of the system GaInAs/InP are studied by x-ray diffraction reciprocal space mapping. From the diffraction data we determine the gratting period and shape, the vertical compositional set-up and the non-uniform strain field caused by elastic strain relaxation after surface patterning. In particular, we report a full quantitative strain analysis of such structures. The fitting procedure is based on strain calculation employing linear elasticity theory
A survey will be given on recent advances in the investigation of semiconductor epilayers, heterostr...
A free-standing lateral nanostructure based on GaAs[001] containing a Ga0.97In0.03As single quantum ...
International audienceA synchrotron-based scanning X-ray diffraction study on a GaP/Si pseudo-substr...
The surface shape and the spatial distribution of strain in GaInAs/InP multilayer gratings is experi...
We study the lattice strain relaxation in pseudomorphic surface gratings using high resolution X-ray...
A theoretical study of grazing incidence diffraction by laterally patterned epitaxial nanostructures...
We investigate the strain evolution in low strained gratings befor and after embedding in the substr...
We investigate the strain evolution in low strained gratings before and after embedding in the subst...
This thesis presents newly developed X-ray methods which can be used to characterize in detail the s...
A generalized elastic description of non-uniform strain in layered epitaxial surface gratings is pre...
Multilayered gratings have been investigated by high-resolution grazing incidence diffraction, emplo...
The depth dependent strain relaxation in photolithographically defined and reactive ion etched Si/Si...
The depth dependent strain relaxion in photolithographically defined and reactive ion etched Si/SiGe...
Using X-ray absorption fine structure spectroscopy (XAFS) with synchrotron radiation, we have perfor...
The triple-axis equipment under X-ray grazing incidence diffraction was applied for the first time i...
A survey will be given on recent advances in the investigation of semiconductor epilayers, heterostr...
A free-standing lateral nanostructure based on GaAs[001] containing a Ga0.97In0.03As single quantum ...
International audienceA synchrotron-based scanning X-ray diffraction study on a GaP/Si pseudo-substr...
The surface shape and the spatial distribution of strain in GaInAs/InP multilayer gratings is experi...
We study the lattice strain relaxation in pseudomorphic surface gratings using high resolution X-ray...
A theoretical study of grazing incidence diffraction by laterally patterned epitaxial nanostructures...
We investigate the strain evolution in low strained gratings befor and after embedding in the substr...
We investigate the strain evolution in low strained gratings before and after embedding in the subst...
This thesis presents newly developed X-ray methods which can be used to characterize in detail the s...
A generalized elastic description of non-uniform strain in layered epitaxial surface gratings is pre...
Multilayered gratings have been investigated by high-resolution grazing incidence diffraction, emplo...
The depth dependent strain relaxation in photolithographically defined and reactive ion etched Si/Si...
The depth dependent strain relaxion in photolithographically defined and reactive ion etched Si/SiGe...
Using X-ray absorption fine structure spectroscopy (XAFS) with synchrotron radiation, we have perfor...
The triple-axis equipment under X-ray grazing incidence diffraction was applied for the first time i...
A survey will be given on recent advances in the investigation of semiconductor epilayers, heterostr...
A free-standing lateral nanostructure based on GaAs[001] containing a Ga0.97In0.03As single quantum ...
International audienceA synchrotron-based scanning X-ray diffraction study on a GaP/Si pseudo-substr...