Following our work on simultaneous imaging of single-event-upsets (SEU) and single-event-latchups (SEL) in a static CMOS RAM with the GSI heavy ion microprobe, we tried to locate the addresses of the SEUs induced by a SEL event within one or more of the 8 bit-arrays on the chip. The result was that whenever we triggered a latchup by hitting a latchup-sensitive node, we always found multiple-SEU-events also in bit-arrays far away from the hit, although we made sure that the supply voltage drop during latchup (necessary to stop the latchup process and to prevent destruction of the chip) never went so low as to loose stored bits. Still more surprising we found these multiple-SEU-events also when we hit certain SEL-sensitive nodes though we did...
International audienceWith the increase of sensitivity of devices to single-event upsets (SEUs), the...
In this work, 3T Active Pixel Sensors (APS) are exposed to heavy ions (N, Ar, Kr, Xe), and Single Ev...
This thesis discusses the types of transient faults caused by heavy-ion or a-particle radiation that...
The first simultaneous microbeam mapping of single event upset (SEU) and latchup (SEL) in the CMOS R...
In space, the radiation effects on electronic devices may lead to anomalies referred to as Single-Ev...
Single-event effect (SEE) test data is presented on the Analog Devices ADV212. Focus is given to the...
Using the GSI heavy ion microprobe and a special hardware circuit for upset and latchup detection we...
The single event upset (SEU) imaging has been applied at the GSI heavy ion microprobe to determine t...
The single event effects or phenomena (SEP), which so far have been observed as events falling on on...
Microelectronic devices and systems have been extensively utilized in a variety of radiation environ...
International audienceSingle Event Effects (SEE) caused by external (neutrons, protons, heavy ions) ...
Experimental methods are emphatically described for doing Single Event Effects (SEE) experiments on ...
A dedicated high-speed 18 Kbit static memory featuring synchronous mode, parity and dual port access...
A dedicated high-speed 18 Kbit static memory featuring synchronous mode, parity and dual port access...
The characteristics Of ion-induced charge collection and single-event upset are studied in SOI trans...
International audienceWith the increase of sensitivity of devices to single-event upsets (SEUs), the...
In this work, 3T Active Pixel Sensors (APS) are exposed to heavy ions (N, Ar, Kr, Xe), and Single Ev...
This thesis discusses the types of transient faults caused by heavy-ion or a-particle radiation that...
The first simultaneous microbeam mapping of single event upset (SEU) and latchup (SEL) in the CMOS R...
In space, the radiation effects on electronic devices may lead to anomalies referred to as Single-Ev...
Single-event effect (SEE) test data is presented on the Analog Devices ADV212. Focus is given to the...
Using the GSI heavy ion microprobe and a special hardware circuit for upset and latchup detection we...
The single event upset (SEU) imaging has been applied at the GSI heavy ion microprobe to determine t...
The single event effects or phenomena (SEP), which so far have been observed as events falling on on...
Microelectronic devices and systems have been extensively utilized in a variety of radiation environ...
International audienceSingle Event Effects (SEE) caused by external (neutrons, protons, heavy ions) ...
Experimental methods are emphatically described for doing Single Event Effects (SEE) experiments on ...
A dedicated high-speed 18 Kbit static memory featuring synchronous mode, parity and dual port access...
A dedicated high-speed 18 Kbit static memory featuring synchronous mode, parity and dual port access...
The characteristics Of ion-induced charge collection and single-event upset are studied in SOI trans...
International audienceWith the increase of sensitivity of devices to single-event upsets (SEUs), the...
In this work, 3T Active Pixel Sensors (APS) are exposed to heavy ions (N, Ar, Kr, Xe), and Single Ev...
This thesis discusses the types of transient faults caused by heavy-ion or a-particle radiation that...