Schaltungsanordnung und Verfahren zum Einspeisen von Elektroenergie in ein Plasma

DE 19825056 C UPAB: 20000313 NOVELTY - The circuit has a MOSFET end stage as a driver for a high power IGBT (1), whereby n-conducting and p-conducting MOSFETs (2,3) are connected to form a complementary source follower. Extremely induction-free leads with maximum inductance of 5 nH are used. The MOSFET switch-on and off times are less than or equal to 35 ns, the maximal drain current is 40 A, the maximum gate threshold voltage is 2 Volts, the maximum internal inductance of the backup capacitors (10) is 10 nH and the sum 20 nH and the input capacitance of the complementary source follower between the gate connections (6) and reference potential is not greater than 1.5 nF. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method of supplying electrical energy to a plasma of a glow discharge. USE - For supplying electrical energy to a plasma. ADVANTAGE - High power can be fed to a unipolar or bipolar pulsed plasma with a switching region in the range from 20 to 100 kHz with a conventional IGBT switch