Using indentation testing, wire bond tests and electron microscopy, the influence of increased oxide films on Al metallization surfaces on the wire bonding behavior and hardness was investigated. Oxide film thickness values larger than about 20 nm obstruct the bond contact and resulted in a poor bonding quality. The presence of such films causes also a hardness increase which can be detected by current sensitive indentation test methods. Therefore, an improved indentation testing technique can be applied during the quality control of bondpad metallizations prior to wire bonding
Since roughly 2002, reliability problems occur often at the ball bonds after wire bonding or reliabi...
A micromechanism of thermosonic gold wire bonding was elaborated by examining its interfacial chara...
A limiting factor for the long-term reliability of power MOSFET-based devices is the electro-thermal...
The influence of Al surface condition on the thermocompression bonding of Au wires to Al electrodes ...
In order to develop a microstructure observing technique for wire-bonded interfaces, which is import...
Organic printed circuit boards (PCBs) with Au/Ni plates on bond pads are widely used in chip-on-boar...
In recent years Ni wire bonding has found some interest as a contacting technology for high temperat...
The dependence of wire bond-pull strength on the morphology of the underlying polycrystalline silico...
A micromechanism of thermosonic gold wire bonding was elaborated by examining its interfacial ...
Wire bonding is still the dominating technology for realizing the first level contact of semiconduct...
Cu wire bonding research has exploded exponentially in the past few years. Many studies have been ca...
IC bond pad structures having Al metallization and SiO2 insulator are historically designed with ful...
Nanoscale interfacial evolution in Cu-Al wire bonds during isothermal annealing from 175 °C to 250 °...
Wafer probing technology is a critical testing technology used in the semiconductor manufacturing an...
Due to the complex mechanisms, the ultrasonic (US) wire bonding process is usually optimized in the ...
Since roughly 2002, reliability problems occur often at the ball bonds after wire bonding or reliabi...
A micromechanism of thermosonic gold wire bonding was elaborated by examining its interfacial chara...
A limiting factor for the long-term reliability of power MOSFET-based devices is the electro-thermal...
The influence of Al surface condition on the thermocompression bonding of Au wires to Al electrodes ...
In order to develop a microstructure observing technique for wire-bonded interfaces, which is import...
Organic printed circuit boards (PCBs) with Au/Ni plates on bond pads are widely used in chip-on-boar...
In recent years Ni wire bonding has found some interest as a contacting technology for high temperat...
The dependence of wire bond-pull strength on the morphology of the underlying polycrystalline silico...
A micromechanism of thermosonic gold wire bonding was elaborated by examining its interfacial ...
Wire bonding is still the dominating technology for realizing the first level contact of semiconduct...
Cu wire bonding research has exploded exponentially in the past few years. Many studies have been ca...
IC bond pad structures having Al metallization and SiO2 insulator are historically designed with ful...
Nanoscale interfacial evolution in Cu-Al wire bonds during isothermal annealing from 175 °C to 250 °...
Wafer probing technology is a critical testing technology used in the semiconductor manufacturing an...
Due to the complex mechanisms, the ultrasonic (US) wire bonding process is usually optimized in the ...
Since roughly 2002, reliability problems occur often at the ball bonds after wire bonding or reliabi...
A micromechanism of thermosonic gold wire bonding was elaborated by examining its interfacial chara...
A limiting factor for the long-term reliability of power MOSFET-based devices is the electro-thermal...