The invention relates to a process for the production of a three-dimensional integrated circuit. When joining the substrates which contain a large number of identical components, so-called chips, the resulting yield of a multi-layer system is obtained from the product of the individual yields. This leads to the fact that the yield of a system comprising several component layers is drastically reduced using known processes. In the process according to the invention, two finished substrates are joined together. Previously, however, the top substrate is subjected to a functional test, whereby the intact chips of the substrate are selected. Then this substrate is thinned from the rear, separated into individual chips and only selected, intact c...
WO 200261831 A UPAB: 20020926 NOVELTY - The method involves applying an isotropic adhesive layer to ...
We report the development of 3-dimensional silicon substrate interconnect technologies, specifically...
NOVELTY - A semiconductor component is produced by forming conductive vias through the component lay...
The invention relates to a process for the production of a three-dimnensional integrated circuit whi...
The invention relates to a process for the production of a vertically integrated circuit structure. ...
The invention relates to a process for the production of a three-dimensional component or a componen...
The invention relates to a process for the vertical integration of microelectronic systems. The proc...
Known chip devices are produced by coating plastic substrates. The substrate material is brittle and...
DE 19856573 C UPAB: 20000624 NOVELTY - The method involves producing a first substrate (4) with at l...
Process for connecting a 1st and a 2nd silicon wafer comprises (a) providing the 1st wafer with a po...
WO 2009036969 A1 UPAB: 20090409 NOVELTY - The method involves providing an integrated circuit struct...
DE 19840421 A UPAB: 20000209 NOVELTY - A thin substrate layer is produced from two bonded substrates...
The method involves providing a deformable substrate (11) and using a form tool (15). The substrate ...
The invention is a simple method to fabricate multiple layers of transistors with one on top of each...
WO 200103180 A UPAB: 20010323 NOVELTY - Process for subdividing a wafer comprises forming a trench o...
WO 200261831 A UPAB: 20020926 NOVELTY - The method involves applying an isotropic adhesive layer to ...
We report the development of 3-dimensional silicon substrate interconnect technologies, specifically...
NOVELTY - A semiconductor component is produced by forming conductive vias through the component lay...
The invention relates to a process for the production of a three-dimnensional integrated circuit whi...
The invention relates to a process for the production of a vertically integrated circuit structure. ...
The invention relates to a process for the production of a three-dimensional component or a componen...
The invention relates to a process for the vertical integration of microelectronic systems. The proc...
Known chip devices are produced by coating plastic substrates. The substrate material is brittle and...
DE 19856573 C UPAB: 20000624 NOVELTY - The method involves producing a first substrate (4) with at l...
Process for connecting a 1st and a 2nd silicon wafer comprises (a) providing the 1st wafer with a po...
WO 2009036969 A1 UPAB: 20090409 NOVELTY - The method involves providing an integrated circuit struct...
DE 19840421 A UPAB: 20000209 NOVELTY - A thin substrate layer is produced from two bonded substrates...
The method involves providing a deformable substrate (11) and using a form tool (15). The substrate ...
The invention is a simple method to fabricate multiple layers of transistors with one on top of each...
WO 200103180 A UPAB: 20010323 NOVELTY - Process for subdividing a wafer comprises forming a trench o...
WO 200261831 A UPAB: 20020926 NOVELTY - The method involves applying an isotropic adhesive layer to ...
We report the development of 3-dimensional silicon substrate interconnect technologies, specifically...
NOVELTY - A semiconductor component is produced by forming conductive vias through the component lay...