For the first time, we have obtained the real-time observation, by x-ray topography, of the laser degradation due to the formation of misfit dislocations. We drive the laser diode under a high-energy, high-flux synchrotron micro-x-ray beam. We simultaneously obtain both the laser characteristic curve and the structural characteristics during operation, i.e. the presence of mifit dislocations, laser diode curvature and strain status. From the strain we measure the temperature increase in the epilayer due to the injection current. In other lasers device degradation occured without the formation of misfit dislocations, but by mass transport, and in other lasers no structural degradation was observed
We have studied the rapid degradation of the AlGaAs/GaAs single quantum well laser diodes on Si subs...
We explored degradation in electron-beam-pumped Zn1-xCdxSe/ZnSc laser structures by combining cathod...
ABSTRACT: The growth of highly strained Quantum wells (QWs) on GaAs substrates are facilitated by th...
Broad-area lasers were investigated by high resolution x-ray diffraction (HRXRD) and topography, bef...
The strain distribution in broad-area high-power semiconductor laser diodes is investigated both bef...
Cross-sectional TEM has been applied to the study of defects in degraded InGaAs/AlGaAs double quantu...
The reliability of semiconductor devices depends upon the stability of the constituent materials. St...
The work described in this thesis investigates the effects of elastic strain on the performance of I...
The stability of strained-layer heterostructure lasers can be assessed by their response to stimuli ...
In this paper we describe the properties of GaxIn1-xP-(AlyGa1-y) 0.52In0.48P strained quantum-well (...
In this thesis, the device physics of long wavelength strained quantum-well lasers is explored both ...
The relaxation of the misfit strain by the formation of misfit dislocations in InxGa1-xN/GaN multipl...
The reliability of semiconductor devices depends upon the stability of the constituent materials. St...
In-x Ga1-xN/GaN multiple quantum well (MQW) samples with strain-layer thickness lager/less than the ...
. Catastrophic degradation takes place in case of reaching critical values of laser radiation densit...
We have studied the rapid degradation of the AlGaAs/GaAs single quantum well laser diodes on Si subs...
We explored degradation in electron-beam-pumped Zn1-xCdxSe/ZnSc laser structures by combining cathod...
ABSTRACT: The growth of highly strained Quantum wells (QWs) on GaAs substrates are facilitated by th...
Broad-area lasers were investigated by high resolution x-ray diffraction (HRXRD) and topography, bef...
The strain distribution in broad-area high-power semiconductor laser diodes is investigated both bef...
Cross-sectional TEM has been applied to the study of defects in degraded InGaAs/AlGaAs double quantu...
The reliability of semiconductor devices depends upon the stability of the constituent materials. St...
The work described in this thesis investigates the effects of elastic strain on the performance of I...
The stability of strained-layer heterostructure lasers can be assessed by their response to stimuli ...
In this paper we describe the properties of GaxIn1-xP-(AlyGa1-y) 0.52In0.48P strained quantum-well (...
In this thesis, the device physics of long wavelength strained quantum-well lasers is explored both ...
The relaxation of the misfit strain by the formation of misfit dislocations in InxGa1-xN/GaN multipl...
The reliability of semiconductor devices depends upon the stability of the constituent materials. St...
In-x Ga1-xN/GaN multiple quantum well (MQW) samples with strain-layer thickness lager/less than the ...
. Catastrophic degradation takes place in case of reaching critical values of laser radiation densit...
We have studied the rapid degradation of the AlGaAs/GaAs single quantum well laser diodes on Si subs...
We explored degradation in electron-beam-pumped Zn1-xCdxSe/ZnSc laser structures by combining cathod...
ABSTRACT: The growth of highly strained Quantum wells (QWs) on GaAs substrates are facilitated by th...