To simulate transient enhanced diffusion (TED) of dopants after ion implantation, a very accurate model for the interaction of self interstitials with extended defects is indispensable. Recently, such a model has been published by Cowern including the formation of {113} defects via small selfü interstitial clusters. Extracted from experimental results, this continuum model consists of a large set of coupled differential equations and, consequently, simulation times are rather high. In this letter, we present a model based on only seven differential equations leading to almost identical results in comparison to those of the original model. The reduction obtained will allow the application of the clustering model for the simulation of TED in ...
A method is proposed to reduce the number of equations and the calculation time of a one-step modeli...
A quantitative description of the transient diffusion and activation of boron during post-implantati...
Producción CientíficaIon implantation is a very well established technique to introduce dopants in s...
The accurate simulation of the transient enhanced diffusion (TED) of dopants during the post-implant...
In this contribution we present a model for transient enhanced diffusion of boron in silicon. This m...
Transient effects on diffusion and activation during post-implantation anneals are a major obstacle ...
Boron exhibits anomalous diffusion during the initial phases of ion implant annealing. Boron TED is ...
Rapporteur interne : M. Thomas Heiser, professeur, ULP Rapporteur externe : M. Bernard Pichaud, prof...
We present new experimental results on the transient enhanced diffusion (TED) of boron after ion imp...
Low-energy high-dose ion implantation of different dopants (P, Sb, As, В and others) into monocrysta...
The current understanding of dopant diffusion in silicon comes from the synthesis of experimental an...
Rapporteurs : A.HALIMAOUI et B.PICHAUD Examinateurs : F.OLIVIÈ, J.BOULMER, et D.ALQUIER invitéé : E....
We study the effects of oversized solute atoms on the diffusion of clusters of self-interstitial ato...
Temperature-accelerated tight-binding molecular dynamics simulations show that self-interstitial clu...
Classical molecular dynamics simulations are used to study damage produced during implantation of se...
A method is proposed to reduce the number of equations and the calculation time of a one-step modeli...
A quantitative description of the transient diffusion and activation of boron during post-implantati...
Producción CientíficaIon implantation is a very well established technique to introduce dopants in s...
The accurate simulation of the transient enhanced diffusion (TED) of dopants during the post-implant...
In this contribution we present a model for transient enhanced diffusion of boron in silicon. This m...
Transient effects on diffusion and activation during post-implantation anneals are a major obstacle ...
Boron exhibits anomalous diffusion during the initial phases of ion implant annealing. Boron TED is ...
Rapporteur interne : M. Thomas Heiser, professeur, ULP Rapporteur externe : M. Bernard Pichaud, prof...
We present new experimental results on the transient enhanced diffusion (TED) of boron after ion imp...
Low-energy high-dose ion implantation of different dopants (P, Sb, As, В and others) into monocrysta...
The current understanding of dopant diffusion in silicon comes from the synthesis of experimental an...
Rapporteurs : A.HALIMAOUI et B.PICHAUD Examinateurs : F.OLIVIÈ, J.BOULMER, et D.ALQUIER invitéé : E....
We study the effects of oversized solute atoms on the diffusion of clusters of self-interstitial ato...
Temperature-accelerated tight-binding molecular dynamics simulations show that self-interstitial clu...
Classical molecular dynamics simulations are used to study damage produced during implantation of se...
A method is proposed to reduce the number of equations and the calculation time of a one-step modeli...
A quantitative description of the transient diffusion and activation of boron during post-implantati...
Producción CientíficaIon implantation is a very well established technique to introduce dopants in s...