For communication and sensor system applications, Monolithic Microwave Integrated Circuits (MMICs) feature performance, functionality, and competitive price. In this paper, pseudomorphic HEMT ICs for communication and sensor applications up to 40 Gbit/s and 100 GHz are discussed. Specifically, we will address mixed-signal ICs, OEICs, as well as millimeter-wave multifunctional ICs and power amplifiers
Abstract — Research and development of InP-based transistors and integrated circuits (ICs) are driv...
Metamorphic high electron mobility transistor (mHEMT) technologies with 100, 50, and 35 nm gate leng...
Integrated circuits based on metamorphic InAlAs/InGaAs HEMTs with 70 nm gate length an 4" GaAs subst...
Abstract- For sensor and communication system applications, Monolithic Microwave Integrated Circuits...
Using advanced III/V process technologies, a variety of state-of-the-art millimeter-wave monolithic ...
HEMT devices exhibit excellent figures of merit for high frequency operation. Therefore they are str...
The Fraunhofer IAF developed a variety of advanced mixed-signal monolithic integrated circuits (ICs)...
ABSTRACT — Advanced circuits based on metamorphic HEMT (MHEMT) technologies on 4 ” GaAs substrates ...
Integrated circuits based on metamorphic HEMT (MHEMT) technologies on 4” GaAs substrates for both mi...
Advanced circuits based on metamorphic HEMT (MHEMT) technologies on 4" GaAs substrates for both mill...
During the last years, the Fraunhofer IAF developed a variety of state-of-the-art millimeter-wave mo...
In this paper, we present the development of submillimeter-wave monolithic integrated circuits (S-MM...
In this paper we present coplanar MMICs based on both, metamorphic (MHEMT) and pseudomorphic (PHEMT)...
For the next generation of sensors and communication systems operating at frequencies up to 600 GHz ...
For the next generation of sensors and communication systems operating at frequencies up to 600 GHz ...
Abstract — Research and development of InP-based transistors and integrated circuits (ICs) are driv...
Metamorphic high electron mobility transistor (mHEMT) technologies with 100, 50, and 35 nm gate leng...
Integrated circuits based on metamorphic InAlAs/InGaAs HEMTs with 70 nm gate length an 4" GaAs subst...
Abstract- For sensor and communication system applications, Monolithic Microwave Integrated Circuits...
Using advanced III/V process technologies, a variety of state-of-the-art millimeter-wave monolithic ...
HEMT devices exhibit excellent figures of merit for high frequency operation. Therefore they are str...
The Fraunhofer IAF developed a variety of advanced mixed-signal monolithic integrated circuits (ICs)...
ABSTRACT — Advanced circuits based on metamorphic HEMT (MHEMT) technologies on 4 ” GaAs substrates ...
Integrated circuits based on metamorphic HEMT (MHEMT) technologies on 4” GaAs substrates for both mi...
Advanced circuits based on metamorphic HEMT (MHEMT) technologies on 4" GaAs substrates for both mill...
During the last years, the Fraunhofer IAF developed a variety of state-of-the-art millimeter-wave mo...
In this paper, we present the development of submillimeter-wave monolithic integrated circuits (S-MM...
In this paper we present coplanar MMICs based on both, metamorphic (MHEMT) and pseudomorphic (PHEMT)...
For the next generation of sensors and communication systems operating at frequencies up to 600 GHz ...
For the next generation of sensors and communication systems operating at frequencies up to 600 GHz ...
Abstract — Research and development of InP-based transistors and integrated circuits (ICs) are driv...
Metamorphic high electron mobility transistor (mHEMT) technologies with 100, 50, and 35 nm gate leng...
Integrated circuits based on metamorphic InAlAs/InGaAs HEMTs with 70 nm gate length an 4" GaAs subst...