Vertikal-Transistor mit beweglichen Gate und Verfahren zu dessen Herstelllung

DE 10029501 C UPAB: 20011113 NOVELTY - Vertical field effect transistor made from a semiconductor wafer comprises a residual transistor consisting of a source region (42), a channel region (3), a drain region (1), and a moving gate structure (8) made from the semiconductor material arranged before the channel region. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a process for producing a field effect transistor comprising defining the source, drain and channel regions of the residual transistor by forming doping layers in or on a semiconductor wafer; and defining the moving gate structure by isotropic and/or anisotropic etching. Preferred Features: The wafer material is single crystalline silicon. The residual transistor consists of vertical coated regions of different doping. USE - Used in pressure sensors, acceleration sensors, vibration sensors and in positioning systems. ADVANTAGE - The transistor has high mechanical stability