A static frequency divider with a maximum operating frequency of up to 66 GHz was developed for applications in high-speed digital systems. To the authors' knowledge, this is the highest operation frequency obtained for a static divider based on high electron mobility transistor (HEMT) technology. The complete circuit has a power consumption of 450 mW at supply voltages Vcc = 2 V and Vss = -3 V. The input signal is single-ended. The differential output driver is designed in current mode logic (CML) and is able to drive a 50 ohm external load
This paper presents a broadband, static, 2:1 frequency divider in a bulk 90 nm CMOS LP (low-power) t...
A coplanar single-ended frequency doubler based on a 100 nm metamorphic HEMT technology is presented...
Integrated circuits based on metamorphic HEMT (MHEMT) technologies on 4” GaAs substrates for both mi...
The design and performance of a dynamic divider by four based on a 100 nm metamorphic enhancement HE...
Two static and two dynamic frequency dividers based on enhancement and depletion 0.2-mu m gate lengt...
Based on a 100 nm metamorphic HEMT process with 220 GHz transit frequency fT an optimised dynamic 2:...
A divide-by-two dynamic frequency divider based on enhancement and depletion 0.2 mu m gate length ps...
Abstract—A 32:1 static frequency divider consisting of five stages of 2:1 dividers using current mod...
A 2:1 static frequency divider using a band-pass load was fabricated in a digital 90nm SOI CMOS tech...
In this work a static frequency divider-by-two based on source coupled logic (SCL), using a 100 nm g...
Advanced circuits based on metamorphic HEMT (MHEMT) technologies on 4" GaAs substrates for both mill...
Abstract—Static frequency dividers are widely used technology performance benchmark circuits. Using ...
A frequency devider based on AlGaAs/GaAs/AlGaAs quantum well FETs with 0.2 micrometer gate length ha...
ABSTRACT — Advanced circuits based on metamorphic HEMT (MHEMT) technologies on 4 ” GaAs substrates ...
In this paper, the authors present a fully integrated frequency divider with a divide ratio of 32, u...
This paper presents a broadband, static, 2:1 frequency divider in a bulk 90 nm CMOS LP (low-power) t...
A coplanar single-ended frequency doubler based on a 100 nm metamorphic HEMT technology is presented...
Integrated circuits based on metamorphic HEMT (MHEMT) technologies on 4” GaAs substrates for both mi...
The design and performance of a dynamic divider by four based on a 100 nm metamorphic enhancement HE...
Two static and two dynamic frequency dividers based on enhancement and depletion 0.2-mu m gate lengt...
Based on a 100 nm metamorphic HEMT process with 220 GHz transit frequency fT an optimised dynamic 2:...
A divide-by-two dynamic frequency divider based on enhancement and depletion 0.2 mu m gate length ps...
Abstract—A 32:1 static frequency divider consisting of five stages of 2:1 dividers using current mod...
A 2:1 static frequency divider using a band-pass load was fabricated in a digital 90nm SOI CMOS tech...
In this work a static frequency divider-by-two based on source coupled logic (SCL), using a 100 nm g...
Advanced circuits based on metamorphic HEMT (MHEMT) technologies on 4" GaAs substrates for both mill...
Abstract—Static frequency dividers are widely used technology performance benchmark circuits. Using ...
A frequency devider based on AlGaAs/GaAs/AlGaAs quantum well FETs with 0.2 micrometer gate length ha...
ABSTRACT — Advanced circuits based on metamorphic HEMT (MHEMT) technologies on 4 ” GaAs substrates ...
In this paper, the authors present a fully integrated frequency divider with a divide ratio of 32, u...
This paper presents a broadband, static, 2:1 frequency divider in a bulk 90 nm CMOS LP (low-power) t...
A coplanar single-ended frequency doubler based on a 100 nm metamorphic HEMT technology is presented...
Integrated circuits based on metamorphic HEMT (MHEMT) technologies on 4” GaAs substrates for both mi...