At 1 x 12 metal-semiconductor-metal (MSM) photodiode array operating at 10 Gbit/s per channel was developed for short-haul 0.85 µm wavelength parallel optical links. The GaAs-based MSM photodiodes with a diameter of 80 µm have a responsivity of 0.30 A/W a 3 V, a dark current of less than 1 nA at 3 V, a capacitance of 0.20 pF at 1 MHz, and a - 3 dB bandwidth of 10 GHz at (2.5 V, 50 Ohm)
The first 10 Gbit/s long-wavelength monolithic integrated photoreceiver grown on GaAs substrate has ...
An 8.2 GHz bandwidth monolithic optoelectronic receiver consisting of an MSM photodiode, a transimpe...
Future high performance digital computing systems will demand extremely high throughput and connecti...
A photoreceiver based on a metal-semiconductor-metal (MSM) photodiode and AlGaAs/GaAs HEMTs is prese...
An MBE grown InGaAs metal semiconductor metal (MSM) photodiode (PD) with an InAlAs barrier enhancem...
A 10 Gibt/s monolithic integrated optoelectronic receiver has been fabricated with a metalsemiconduc...
A high performance long-wavelength interdigitated metal-semiconductor-metal (MSM) photodetectors is ...
A novel optoelectronic receiver chip for a data rate of 2.5Gbit/s has been developed and tested. It ...
139 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997.A variety of techniques to en...
139 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997.A variety of techniques to en...
We report, for the first time, the realization of a long-wavelength monolithically integrated MSM-FE...
A 0.85 mu m wavelength monolithic integrated optoelectronic receiver consisting of a GaAs MSM photod...
With the advent of plastic fiber-optic communication links in recent years, large-area photodetector...
The first 20Gbit/s 1.3-1.55mu m wavelength monolithic integrated photoreceiver grown on GaAs substra...
The first 20 Gbit/s 1.3-1.55 mu m wavelength monolithic integrated photoreceiver grown on GaAs subst...
The first 10 Gbit/s long-wavelength monolithic integrated photoreceiver grown on GaAs substrate has ...
An 8.2 GHz bandwidth monolithic optoelectronic receiver consisting of an MSM photodiode, a transimpe...
Future high performance digital computing systems will demand extremely high throughput and connecti...
A photoreceiver based on a metal-semiconductor-metal (MSM) photodiode and AlGaAs/GaAs HEMTs is prese...
An MBE grown InGaAs metal semiconductor metal (MSM) photodiode (PD) with an InAlAs barrier enhancem...
A 10 Gibt/s monolithic integrated optoelectronic receiver has been fabricated with a metalsemiconduc...
A high performance long-wavelength interdigitated metal-semiconductor-metal (MSM) photodetectors is ...
A novel optoelectronic receiver chip for a data rate of 2.5Gbit/s has been developed and tested. It ...
139 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997.A variety of techniques to en...
139 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997.A variety of techniques to en...
We report, for the first time, the realization of a long-wavelength monolithically integrated MSM-FE...
A 0.85 mu m wavelength monolithic integrated optoelectronic receiver consisting of a GaAs MSM photod...
With the advent of plastic fiber-optic communication links in recent years, large-area photodetector...
The first 20Gbit/s 1.3-1.55mu m wavelength monolithic integrated photoreceiver grown on GaAs substra...
The first 20 Gbit/s 1.3-1.55 mu m wavelength monolithic integrated photoreceiver grown on GaAs subst...
The first 10 Gbit/s long-wavelength monolithic integrated photoreceiver grown on GaAs substrate has ...
An 8.2 GHz bandwidth monolithic optoelectronic receiver consisting of an MSM photodiode, a transimpe...
Future high performance digital computing systems will demand extremely high throughput and connecti...