4.7 W continuous-wave (CW) and 11.7 W quasi-CW output power have been demonstrated for laser diodes based on six-fold stacks of InGaAs/GaAs quantum dots. Lifetimes beyond 3000 h at 1.0 and 1.5 W output power and 50degreesC heatsink temperature were measured. The output power is limited by catastrophic optical mirror damage occurring at 19.5 MW/cm(2) on the front facet
We present the results of an accelerated life test study of quantum dot lasers operating at 1310 nm....
The latest achievements of quantum dot based semiconductor disk lasers are reviewed. Several lasers ...
Continuous wave optically pumped semiconductor disk lasers based on Stranski-Krastanow grown quantum...
We demonstrate multiwatt cw output power from an optically pumped quantum-dot semiconductor disk las...
High power and long lifetime have been demonstrated for a semiconductor quantum-dot (QD) laser with ...
Continuous wave operation of a semiconductor laser diode based on five stacks of InAs quantum dots (...
Quantum dots (QD) offer significant advantages over quantum wells (QW) as the active material in hig...
Catastrophic optical bulk damage occurs in broad-area MOCVD-grown InP/(Al)GaInP 7xx emitting quantum...
Data are presented showing that a quantum-dot laser diode can achieve a continuous-wave room-tempera...
InAs quantum dots (QD) on InP emitting at 1.55 micrometer grown by using conventional MOVPE sources ...
Data are presented showing that a quantum-dot laser diode can achieve a continuous-wave room-tempera...
We present the first reliability study of InAs/GaAs self-assembled quantum dot lasers epitaxially gr...
An important advantage of the quantum dot (QD) laser diode is its ability to reach lasing threshold ...
InAs quantum dots (QDs) on InP were implemented as active layers in laser structures completely grow...
Epitaxially grown quantum dot (QD) lasers are emerging as an economical approach to obtain on-chip l...
We present the results of an accelerated life test study of quantum dot lasers operating at 1310 nm....
The latest achievements of quantum dot based semiconductor disk lasers are reviewed. Several lasers ...
Continuous wave optically pumped semiconductor disk lasers based on Stranski-Krastanow grown quantum...
We demonstrate multiwatt cw output power from an optically pumped quantum-dot semiconductor disk las...
High power and long lifetime have been demonstrated for a semiconductor quantum-dot (QD) laser with ...
Continuous wave operation of a semiconductor laser diode based on five stacks of InAs quantum dots (...
Quantum dots (QD) offer significant advantages over quantum wells (QW) as the active material in hig...
Catastrophic optical bulk damage occurs in broad-area MOCVD-grown InP/(Al)GaInP 7xx emitting quantum...
Data are presented showing that a quantum-dot laser diode can achieve a continuous-wave room-tempera...
InAs quantum dots (QD) on InP emitting at 1.55 micrometer grown by using conventional MOVPE sources ...
Data are presented showing that a quantum-dot laser diode can achieve a continuous-wave room-tempera...
We present the first reliability study of InAs/GaAs self-assembled quantum dot lasers epitaxially gr...
An important advantage of the quantum dot (QD) laser diode is its ability to reach lasing threshold ...
InAs quantum dots (QDs) on InP were implemented as active layers in laser structures completely grow...
Epitaxially grown quantum dot (QD) lasers are emerging as an economical approach to obtain on-chip l...
We present the results of an accelerated life test study of quantum dot lasers operating at 1310 nm....
The latest achievements of quantum dot based semiconductor disk lasers are reviewed. Several lasers ...
Continuous wave optically pumped semiconductor disk lasers based on Stranski-Krastanow grown quantum...