Large area AlGaN/GaN HEMTs grown on insulating silicon carbide substrates

Large periphery Al(0.25)Ga(0.75)N/GaN-HEMTs on SiC-substrates are fabricated on a 2-inch process line using stepper lithography. DC characteristics reveal current densities above 1,2 A/mm and intrinsic transconductances of 360mS/mm. Depending on device size the maximum frequency of oscillation f(max) varies from 27-79 GHz. With these devices a power density of 5.2 W/mm and a power level of 13.8W is achieved at 2GHz