We present an extensive data set on deep states of the transition metals Ti, V, Cr, Ta, and W in the bandgap of the three SiC-polytypes 4H, 6H, and 15R. The data are compared with theoretical predictions for 3C-SiC. The influence of inequivalent lattice sites in Silicon Carbide on the level energies is discussed
International audienceThe simplest form of rhombohedral silicon carbide is unknown. Previous studies...
The effects on 4H-silicon carbide epilayers of irradiation with protons and electrons having particl...
The optical bandgap energies (OBGE) of 3C, 15R, 6H and 4H-SiC have been investigate experimentally b...
Vanadium, substituting for silicon in SiC-polytypes, has been identified as an amphoteric deep level...
A review is given on the results of magnetic resonance studies of transition metal impurities in SiC...
Tungsten was incorporated in SiC and W related defects were investigated using deep level transient ...
The global band structure from ab-initio calculations using DFT-LDA concepts is presented and discus...
Silicon carbide SiC was investigated for deep band gap states of europium by means of deep level t...
The ground-state properties of cubic silicon carbide are calculated as a stepping stone towards a de...
Silicon carbide (SiC) has been discussed as a promising material for high power bipolar devices for ...
The electronic structure of the three silicon carbide polytypes 3C, 6H, and 4H have been studied usi...
By electron spin resonance (ESR) and photo-ESR, vanadium has been identified as an electrically amph...
During the 2001-2002 award period, we performed research on Pt/Ti/bare 6H-SiC and bare 4H-SiC interf...
Electron spin resonance (ESR) of silicon-substitutional vanadium in its neutral V (exp 4+)(ind Si) (...
The authors investigated deep levels in the whole energy range of bandgap of 4H-SiC, which are gener...
International audienceThe simplest form of rhombohedral silicon carbide is unknown. Previous studies...
The effects on 4H-silicon carbide epilayers of irradiation with protons and electrons having particl...
The optical bandgap energies (OBGE) of 3C, 15R, 6H and 4H-SiC have been investigate experimentally b...
Vanadium, substituting for silicon in SiC-polytypes, has been identified as an amphoteric deep level...
A review is given on the results of magnetic resonance studies of transition metal impurities in SiC...
Tungsten was incorporated in SiC and W related defects were investigated using deep level transient ...
The global band structure from ab-initio calculations using DFT-LDA concepts is presented and discus...
Silicon carbide SiC was investigated for deep band gap states of europium by means of deep level t...
The ground-state properties of cubic silicon carbide are calculated as a stepping stone towards a de...
Silicon carbide (SiC) has been discussed as a promising material for high power bipolar devices for ...
The electronic structure of the three silicon carbide polytypes 3C, 6H, and 4H have been studied usi...
By electron spin resonance (ESR) and photo-ESR, vanadium has been identified as an electrically amph...
During the 2001-2002 award period, we performed research on Pt/Ti/bare 6H-SiC and bare 4H-SiC interf...
Electron spin resonance (ESR) of silicon-substitutional vanadium in its neutral V (exp 4+)(ind Si) (...
The authors investigated deep levels in the whole energy range of bandgap of 4H-SiC, which are gener...
International audienceThe simplest form of rhombohedral silicon carbide is unknown. Previous studies...
The effects on 4H-silicon carbide epilayers of irradiation with protons and electrons having particl...
The optical bandgap energies (OBGE) of 3C, 15R, 6H and 4H-SiC have been investigate experimentally b...
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