Verfahren zur Herstellung eines Halbleiter-Metallkontaktes durch eine dielektrische Schicht

WO 200225742 A UPAB: 20020711 NOVELTY - The method involves applying a metal coating to the dielectric layer and heating the metal coating temporarily at a point or line under monitoring to form a local molten mixture of only the metal coating, the dielectric layer and the semiconducting layer immediately beneath the dielectric layer. The molten mixture causes a contact between the semiconducting layer and the metal coating after solidification. USE - For producing a semiconductor-metal contact through a dielectric layer, especially for contacting the base layer of a solar cell. ADVANTAGE - Developed to overcomes certain disadvantages of conventional arrangements, especially to enable manufacture of powerful solar cells on an industrial scale