Transient effects on diffusion and activation during post-implantation anneals are a major obstacle for the further miniaturization of ultra-large-scale integrated semiconductor devices. The article reviews recent developments in the simu-lation of such phenomena with particular emphasis on models for the kinetics of self-interstitial agglomerates and boron interstitial clusters
We present new experimental results on the transient enhanced diffusion (TED) of boron after ion imp...
Rapid thermal annealing of arsenic and boron difluoride implants, such as those used for source/drai...
The continuous scaling of electron devices places strong demands on device design and simulation. Th...
A quantitative description of the transient diffusion and activation of boron during post-implantati...
In this contribution we present a model for transient enhanced diffusion of boron in silicon. This m...
A quantitative description of the transient diffusion and activation of boron during post-implantati...
The time evolution of dopant diffusion and electrical activation after boron ion implantation into c...
The time evolution of the transiently enhanced diffusion and of the electrical activation of boron i...
We investigate the nucleation and evolution of boron-interstitial clusters (BIC), driven by high int...
In this work a rate equations model describing the interstitials (I) diffusion in a trap containing ...
Boron marker-layer structures have been used to analyze the evolution of Boron-Interstitial clusters...
The nature of ion-implantation induced clusters of boron and silicon-self interstitials (BICs), and ...
To simulate transient enhanced diffusion (TED) of dopants after ion implantation, a very accurate mo...
A two stream model of boron diffusion in silicon has been developed. The model is intended for simul...
\u3cp\u3eTransient enhanced diffusion of B in silicon is modelled at temperatures down to 500 °C, us...
We present new experimental results on the transient enhanced diffusion (TED) of boron after ion imp...
Rapid thermal annealing of arsenic and boron difluoride implants, such as those used for source/drai...
The continuous scaling of electron devices places strong demands on device design and simulation. Th...
A quantitative description of the transient diffusion and activation of boron during post-implantati...
In this contribution we present a model for transient enhanced diffusion of boron in silicon. This m...
A quantitative description of the transient diffusion and activation of boron during post-implantati...
The time evolution of dopant diffusion and electrical activation after boron ion implantation into c...
The time evolution of the transiently enhanced diffusion and of the electrical activation of boron i...
We investigate the nucleation and evolution of boron-interstitial clusters (BIC), driven by high int...
In this work a rate equations model describing the interstitials (I) diffusion in a trap containing ...
Boron marker-layer structures have been used to analyze the evolution of Boron-Interstitial clusters...
The nature of ion-implantation induced clusters of boron and silicon-self interstitials (BICs), and ...
To simulate transient enhanced diffusion (TED) of dopants after ion implantation, a very accurate mo...
A two stream model of boron diffusion in silicon has been developed. The model is intended for simul...
\u3cp\u3eTransient enhanced diffusion of B in silicon is modelled at temperatures down to 500 °C, us...
We present new experimental results on the transient enhanced diffusion (TED) of boron after ion imp...
Rapid thermal annealing of arsenic and boron difluoride implants, such as those used for source/drai...
The continuous scaling of electron devices places strong demands on device design and simulation. Th...
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