Add to ORKGHeterostructures of GaN/AlGaN for power applications are grown by metal organic vapor phase epitaxy in a multiwafer reactor on sapphire and SiC substrates. Electrical properties of the two-dimensional electron gas are discussed. The sheet carrier concentration was varied from 4x1012 cm-2 to 1.5x1013 cm-2 by modulation doping. From electrical and material properties we show the excellent uniformity of the wafers. The influence of the Al content on the sheet carrier concentration is demonstrated. A maximum electron mobility of 1500 cm2/Vs is achieved for an undoped sample. Device fabrication was done on full 2" wafers b electron-beam and contact lithography. The quality of the grown epi layers and the technology is confirmed by CW load pull m...
The performance of an innovative delta-doped AlGaN/AlN/GaN high-electron-mobility transistor (HEMT) ...
101 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1999.The fabrication of AlGaN/GaN ...
In order to solve the problems of GaN heteroepitaxy on sapphire substrate, some techniques were expl...
Heterostructures of GaN/AlGaN for power applications are grown by metal organic vapor phase epitaxy ...
Using NH3 cracked on the growing surface as the nitrogen precursor, an AlGaN/GaN modulation-doped (M...
High electron mobility transistor material and device properties based on AlxGa1-xN/GaN heterostruct...
We report on the growth of high electron mobility AlGaN/GaN heterostructures on sapphire substrates ...
In this thesis we have demonstrated Metalorganic Vapor Phase Epitaxy (MOVPE) of single layer GaN and...
The III-nitride materials, consisting of Al, Ga, In and N, have several physical properties that mak...
AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices (SLs) as barrier layer i...
As a promising candidate for future microwave power devices, GaN-based high-electron mobility transi...
The industrial level technologies including molecular beam epitaxy and submicron planar processing a...
The structural properties and surface morphology of AlN epitaxial layers grown by ammonia (NH3) and ...
AlGaN/AlN/GaN structures are grown by metalorganic vapor phase epitaxy on sapphire substrates. Influ...
The research described in this thesis has been carried out within a joint project between the Radbou...
The performance of an innovative delta-doped AlGaN/AlN/GaN high-electron-mobility transistor (HEMT) ...
101 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1999.The fabrication of AlGaN/GaN ...
In order to solve the problems of GaN heteroepitaxy on sapphire substrate, some techniques were expl...
Heterostructures of GaN/AlGaN for power applications are grown by metal organic vapor phase epitaxy ...
Using NH3 cracked on the growing surface as the nitrogen precursor, an AlGaN/GaN modulation-doped (M...
High electron mobility transistor material and device properties based on AlxGa1-xN/GaN heterostruct...
We report on the growth of high electron mobility AlGaN/GaN heterostructures on sapphire substrates ...
In this thesis we have demonstrated Metalorganic Vapor Phase Epitaxy (MOVPE) of single layer GaN and...
The III-nitride materials, consisting of Al, Ga, In and N, have several physical properties that mak...
AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices (SLs) as barrier layer i...
As a promising candidate for future microwave power devices, GaN-based high-electron mobility transi...
The industrial level technologies including molecular beam epitaxy and submicron planar processing a...
The structural properties and surface morphology of AlN epitaxial layers grown by ammonia (NH3) and ...
AlGaN/AlN/GaN structures are grown by metalorganic vapor phase epitaxy on sapphire substrates. Influ...
The research described in this thesis has been carried out within a joint project between the Radbou...
The performance of an innovative delta-doped AlGaN/AlN/GaN high-electron-mobility transistor (HEMT) ...
101 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1999.The fabrication of AlGaN/GaN ...
In order to solve the problems of GaN heteroepitaxy on sapphire substrate, some techniques were expl...