The implementation of high capacity optical communication networks, based on WDM and high speed (O)TDM technologies, needs high performance and low cost high speed transmitters in the future. Monolithically integrated mode-locked semiconductor lasers are promising solutions due to their compactness, ease to handle, robustness, and cost aspects. Different monolithic laser architectures and their performance characteristics have been published in the literature to date. In this paper, the amplitude noise and jitter noise of fiber pigtailed 40 GHz pulse laser modules, which contain a monolithic GaInAsP/InP mode-locked semiconductor laser chip, are presented. The influence of the noise behavior on the bit error rate (BER) performance was studie...
We report on the development of an ultralow-noise, external-cavity, actively mode-locked semiconduct...
Comprehensive experimental studies on the effects of wavelength tuning on pulse, noise, and locking ...
We report on the development of an ultralow-noise, external-cavity, actively mode-locked semiconduct...
In this work, we investigate a 1 GHz InP-based hybrid mode-locked laser chip and find an amplitude n...
The operation of a monolithic 5-quantum well, 4-section mode locked semiconductor laser with an inte...
Phase noise in gain-switched lasers is investigated theoretically using the semiconductor laser rate...
The broad-band amplitude noise of 40-GHz pulses from a subharmonically synchronous mode-locked (SSML...
phys.ethz.ch). Abstract: We present a timing jitter and amplitude noise characterization of a high-p...
We report a semiconductor-based, low-noise, 10.24 GHz actively mode-locked laser with 4.65 fs of rel...
Broad-band amplitude noise (100 MHz to 20 GHz) of 40-GHz pulses generated by a subharmonically hybri...
We report on low noise performance of a 10 GHz actively mode-locked laser. The laser is a fiberized ...
We report a semiconductor-based, low-noise, 10.24 GHz actively mode-locked laser with 4.65 fs of rel...
Intensity noise of mode-locked fiber lasers is characterized systematically for all major mode-locki...
Inherent Q switching as a source of intracavity pulse energy modulations, i.e., unwanted amplitude n...
We report on a 10.24 GHz actively mode-locked laser with 4.65 fs of relative timing jitter and 0.036...
We report on the development of an ultralow-noise, external-cavity, actively mode-locked semiconduct...
Comprehensive experimental studies on the effects of wavelength tuning on pulse, noise, and locking ...
We report on the development of an ultralow-noise, external-cavity, actively mode-locked semiconduct...
In this work, we investigate a 1 GHz InP-based hybrid mode-locked laser chip and find an amplitude n...
The operation of a monolithic 5-quantum well, 4-section mode locked semiconductor laser with an inte...
Phase noise in gain-switched lasers is investigated theoretically using the semiconductor laser rate...
The broad-band amplitude noise of 40-GHz pulses from a subharmonically synchronous mode-locked (SSML...
phys.ethz.ch). Abstract: We present a timing jitter and amplitude noise characterization of a high-p...
We report a semiconductor-based, low-noise, 10.24 GHz actively mode-locked laser with 4.65 fs of rel...
Broad-band amplitude noise (100 MHz to 20 GHz) of 40-GHz pulses generated by a subharmonically hybri...
We report on low noise performance of a 10 GHz actively mode-locked laser. The laser is a fiberized ...
We report a semiconductor-based, low-noise, 10.24 GHz actively mode-locked laser with 4.65 fs of rel...
Intensity noise of mode-locked fiber lasers is characterized systematically for all major mode-locki...
Inherent Q switching as a source of intracavity pulse energy modulations, i.e., unwanted amplitude n...
We report on a 10.24 GHz actively mode-locked laser with 4.65 fs of relative timing jitter and 0.036...
We report on the development of an ultralow-noise, external-cavity, actively mode-locked semiconduct...
Comprehensive experimental studies on the effects of wavelength tuning on pulse, noise, and locking ...
We report on the development of an ultralow-noise, external-cavity, actively mode-locked semiconduct...