Mikrostrukturierter Gassensor mit Steuerung der gassensitiven Eigenschaften durch Anlegen eines elektrischen Feldes

WO2003076921 A UPAB: 20040318 NOVELTY - Integrated gas sensor comprises a gas-sensitive resistance layer (4) contacted by electrodes (5) arranged on a semiconductor body (1), and a field electrode (2) separated by an insulating layer (3) arranged underneath the gas-sensitive resistance layer. DETAILED DESCRIPTION - Integrated gas sensor comprises a gas-sensitive resistance layer (4) contacted by electrodes (5) arranged on a semiconductor body (1), and a field electrode (2) separated by an insulating layer (3) arranged underneath the gas-sensitive resistance layer. The insulating layer has a thickness which is approximately less than or equal to 10 times the Debye length LD, in which LD = ( epsilon epsilon 0kT/q2N)1/2 (where T = temperature; epsilon = dielectric constant depending on the material; epsilon 0 = dielectric constant; k = Boltzmann constant; N = charge carrier concentration; and q = elementary charge). USE - Used for measuring air pollutant concentrations in the ppm and ppb regions e.g. in production and process measuring technology, in the car industry and in environmental technology. ADVANTAGE - The sensor is economical