Coupled three-dimensional process and device simulations have been applied to study effects limiting the performance of FinFETs, a novel CMOS transistors suggested to overcome the limitations of conventional CMOS for gate lengths at 50 nm and below
10.1109/SISPAD.2006.282883International Conference on Simulation of Semiconductor Processes and Devi...
Current advanced transistor architectures, such as FinFETs and (stacked) nanowires and nanosheets, e...
Current advanced transistor architectures, such as FinFETs and (stacked) nanowires and nanosheets, e...
Planar Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) have been leading the semiconduc...
An SOI MOSFET with FINFET structure is simulated using a 3-D simulator. I-V characteristics and sub-...
Abstract: This paper targets to show feasibility of a three-dimensional process simulation flow in t...
Technology scaling below 22 nm has brought several detrimental effects such as increased short chann...
To continue the scaling of CMOS technology to 65 nm node and beyond, FinFET double-gate device struc...
The architecture, size and density of metal oxide field effect transistors (MOSFETs) as unit bricks ...
This paper investigates effects from gate scaling in Tri-gate FinFET structure by simulation method,...
In this work an attempt has been made to analyze the scaling limits of Double Gate (DG) underlap and...
Three-dimensional (3D) statistical simulation is presented to propose using triple-gate (TG) fin fie...
Three-dimensional (3D) statistical simulation is presented to propose using triple-gate (TG) fin fie...
Intra-die fluctuations in the nanoscale CMOS technology emerge inherently to geometrical variations ...
none3noWhile traditional scaling used to be accompanied by an improvement in device performance, thi...
10.1109/SISPAD.2006.282883International Conference on Simulation of Semiconductor Processes and Devi...
Current advanced transistor architectures, such as FinFETs and (stacked) nanowires and nanosheets, e...
Current advanced transistor architectures, such as FinFETs and (stacked) nanowires and nanosheets, e...
Planar Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) have been leading the semiconduc...
An SOI MOSFET with FINFET structure is simulated using a 3-D simulator. I-V characteristics and sub-...
Abstract: This paper targets to show feasibility of a three-dimensional process simulation flow in t...
Technology scaling below 22 nm has brought several detrimental effects such as increased short chann...
To continue the scaling of CMOS technology to 65 nm node and beyond, FinFET double-gate device struc...
The architecture, size and density of metal oxide field effect transistors (MOSFETs) as unit bricks ...
This paper investigates effects from gate scaling in Tri-gate FinFET structure by simulation method,...
In this work an attempt has been made to analyze the scaling limits of Double Gate (DG) underlap and...
Three-dimensional (3D) statistical simulation is presented to propose using triple-gate (TG) fin fie...
Three-dimensional (3D) statistical simulation is presented to propose using triple-gate (TG) fin fie...
Intra-die fluctuations in the nanoscale CMOS technology emerge inherently to geometrical variations ...
none3noWhile traditional scaling used to be accompanied by an improvement in device performance, thi...
10.1109/SISPAD.2006.282883International Conference on Simulation of Semiconductor Processes and Devi...
Current advanced transistor architectures, such as FinFETs and (stacked) nanowires and nanosheets, e...
Current advanced transistor architectures, such as FinFETs and (stacked) nanowires and nanosheets, e...
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