Verfahren und Einrichtung zur plasmaaktivierten Schichtabscheidung durch Kathodenzerstaeubung nach dem Magnetron-Prinzip

DE 10303428 A UPAB: 20040901 NOVELTY - Plasma-activated layer deposition process by cathodic sputtering according to the magnetron principle comprises reducing the absolute value of the magnetic field strength of a magnetron magnetic field to a value which reduces the discharge flow of the magnetron discharge by at least 20 %. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a device for plasma-activated layer deposition. USE - For producing thin layers of metals and metal alloys. ADVANTAGE - The layer properties can be controlled