InGaAsP/InGaAlAs 1.55 µm strain-compensated MQW BH lasers with 12.5 GHz cut-off frequency at 90 ºC

Möhrle, M.
Mörl, L.
Sigmund, A.
Suna, A.
Reier, F.
Roehle, H.

Publication date

January 2004

DOI

10.1109/ISLC.2004.1382728

Abstract

1.55 µm strain-compensated multi-quan-tum- well buried heterostructure lasers with InGaAsP quantum wells and InGaAlAs barriers were fabricated, yielding high optical power at low threshold currents. At 90 °C they support a direct modulation with 12.5 GHz

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InGaAsP/InGaAlAs 1.55 µm strain-compensated MQW BH lasers with 12.5 GHz cut-off frequency at 90 ºC

Abstract

Extracted data

InGaAsP/InGaAlAs 1.55 µm strain-compensated MQW BH lasers with 12.5 GHz cut-off frequency at 90 ºC

Abstract

Extracted data

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