Advanced lifetime spectroscopy - methodology and experimental proof

Lifetime spectroscopy (LS) always allows a complete defect characterization on one single sample if data from injection- and temperature-dependent LS (TDLS and IDLS) are combined. To allow an accurate modeling of entire TDLS curves, several physical extensions are introduced in the basic Shockley-Read-Hall (SRH) model. A new routine for data evaluation allows a transparent SRH analysis of IDLS and TDLS data and makes it possible to assess the accuracy and consistency of the determined defect parameters. Applied to LS data from a molybdenum-contaminated silicon sample, the advanced lifetime spectroscopy allows the identification of a known molybdenum donor level at E(ind t)-E(ind V)=0.317 eV with an enhanced electron/hole capture cross section ratio k:= ohm(ind n)/ ohm(ind p)=13. The good agreement with literature and the consistency of the LS results manifest the potential of the proposed advanced LS analysis. If the value for ohm(ind p) is taken from literature, the unknown electron capture cross section of the molybdenum donor level is determined as ohm(ind n)=7.8×10(exp -15) cm2