Add to ORKGIn this paper the MMIC technology, design and characterization of a high power amplifier and driver amplifier MMIC at 30 GHz in AlGaN/GaN HEMT technology are presented. The MMICs are designed using CPW technology on a 390 µm thick SiC substrate. The measured small-signal gain of the driver is 14 dB at 28.5 GHz and the measured output power is 28.6 dBm at 28 GHz. The power amplifier shows a measured small-signal gain of 10.7 dB at 25.5 GHz and output power of 34.1 dBm at 27 GHz. Both MMICs have a very good yield and performance for a first iteration design
International audienceThree power amplifier MMICs at Ka-band frequencies are reported in this paper....
This paper describes highly-efficient GaN/AlGaN HEMT and MMIC power amplifiers for RF-frequencies be...
This paper reports on a wide bandwidth monolithic power amplifier suitable for wide bandwidth applic...
In this paper the MMIC technology, design and characterization of a high power amplifier and driver ...
In this paper the MMIC technology, design and characterization of a high power amplifier and driver ...
This paper presents the design and analysis issues related to the use of recent GaN technologies for...
International audienceTwo high-efficiency power amplifier MMICs utilizing a 100 nm AlGaN/GaN HEM...
This paper presents a high power amplifier at K-band (20.2-21.2 GHz). The AlGaN/GaN CPW MMIC amplifi...
Two high-efficiency power amplifier MMICs utilizing a 100 nm AlGaN/GaN HEMT MMIC technology at Ka-ba...
International audienceTwo high-efficiency power amplifier MMICs utilizing a 100 nm AlGaN/GaN HEM...
This paper presents a high power amplifier at K-band (20.2 - 21.2 GHz). The AlGaN/GaN CPW MMIC ampli...
Three power amplifier MMICs at Ka-band frequencies are reported in this paper. The MMICs are realize...
Three power amplifier MMICs at Ka-band frequencies are reported in this paper. The MMICs are realize...
International audienceThree power amplifier MMICs at Ka-band frequencies are reported in this paper....
This work describes AlGaN/GaN power amplifier MMICs in microstrip line technology on s.i. SiC substr...
International audienceThree power amplifier MMICs at Ka-band frequencies are reported in this paper....
This paper describes highly-efficient GaN/AlGaN HEMT and MMIC power amplifiers for RF-frequencies be...
This paper reports on a wide bandwidth monolithic power amplifier suitable for wide bandwidth applic...
In this paper the MMIC technology, design and characterization of a high power amplifier and driver ...
In this paper the MMIC technology, design and characterization of a high power amplifier and driver ...
This paper presents the design and analysis issues related to the use of recent GaN technologies for...
International audienceTwo high-efficiency power amplifier MMICs utilizing a 100 nm AlGaN/GaN HEM...
This paper presents a high power amplifier at K-band (20.2-21.2 GHz). The AlGaN/GaN CPW MMIC amplifi...
Two high-efficiency power amplifier MMICs utilizing a 100 nm AlGaN/GaN HEMT MMIC technology at Ka-ba...
International audienceTwo high-efficiency power amplifier MMICs utilizing a 100 nm AlGaN/GaN HEM...
This paper presents a high power amplifier at K-band (20.2 - 21.2 GHz). The AlGaN/GaN CPW MMIC ampli...
Three power amplifier MMICs at Ka-band frequencies are reported in this paper. The MMICs are realize...
Three power amplifier MMICs at Ka-band frequencies are reported in this paper. The MMICs are realize...
International audienceThree power amplifier MMICs at Ka-band frequencies are reported in this paper....
This work describes AlGaN/GaN power amplifier MMICs in microstrip line technology on s.i. SiC substr...
International audienceThree power amplifier MMICs at Ka-band frequencies are reported in this paper....
This paper describes highly-efficient GaN/AlGaN HEMT and MMIC power amplifiers for RF-frequencies be...
This paper reports on a wide bandwidth monolithic power amplifier suitable for wide bandwidth applic...