EP 1536531 A UPAB: 20050818 NOVELTY - A quantum cascade laser has an emission wavelength below 3.4 mu m and above 1.5 mu m. The semiconductor multi-layer structure has a cup layer of indium gallium arsenide (InGaAs) and a barrier layer of aluminum arsenic antimonide (AlAsSb). The cup layer thickness is in the optically active range of 1 to 4 nm. USE - Quantum cascade laser. ADVANTAGE - The laser extends the range within which the quantum cascade laser may operate
Quantum-cascade lasers based on a bound-to-continuum transition and emitting at lambda similar to 10...
Quantum-cascade lasers based on a bound-to-continuum transition and emitting at lambda similar to 10...
By optimizing the molecule beam epitaxy growth condition, the quality of quantum cascade (QC) materi...
WO2003023909 A UPAB: 20030516 NOVELTY - Unipolar quantum cascade laser comprises a number of adjacen...
WO 2008086789 A2 UPAB: 20080815 NOVELTY - The unipolar quantum cascade laser comprises semi-conducto...
Quantum-cascade lasers are unipolar light sources based on only one type of carrier, usually electro...
In the recent 20 years, Quantum Cascade Lasers (QCL) technology have seen rapid development and have...
Recent advances and new directions in quantum cascade (QC) lasers are discussed in this paper. Inven...
Recent advances and new directions in quantum cascade (QC) lasers are discussed in this paper. Inven...
We report the first demonstration of InGaAs/AlAsSb/InP quantum cascade lasers. Laser characteristics...
International audienceWe review the current state of the InAs/AlSb quantum cascade laser (QCL) techn...
The growth and characterization of quantum cascade (QC) lasers based on InGaAs/InAlAs material syste...
The quantum cascade laser overthrows the key operating principles of diode lasers. The device is uni...
The papers in this special section were presented at the International Quantum Cascade Lasers School...
Quantum-cascade lasers based on a bound-to-continuum transition and emitting at lambda similar to 10...
Quantum-cascade lasers based on a bound-to-continuum transition and emitting at lambda similar to 10...
Quantum-cascade lasers based on a bound-to-continuum transition and emitting at lambda similar to 10...
By optimizing the molecule beam epitaxy growth condition, the quality of quantum cascade (QC) materi...
WO2003023909 A UPAB: 20030516 NOVELTY - Unipolar quantum cascade laser comprises a number of adjacen...
WO 2008086789 A2 UPAB: 20080815 NOVELTY - The unipolar quantum cascade laser comprises semi-conducto...
Quantum-cascade lasers are unipolar light sources based on only one type of carrier, usually electro...
In the recent 20 years, Quantum Cascade Lasers (QCL) technology have seen rapid development and have...
Recent advances and new directions in quantum cascade (QC) lasers are discussed in this paper. Inven...
Recent advances and new directions in quantum cascade (QC) lasers are discussed in this paper. Inven...
We report the first demonstration of InGaAs/AlAsSb/InP quantum cascade lasers. Laser characteristics...
International audienceWe review the current state of the InAs/AlSb quantum cascade laser (QCL) techn...
The growth and characterization of quantum cascade (QC) lasers based on InGaAs/InAlAs material syste...
The quantum cascade laser overthrows the key operating principles of diode lasers. The device is uni...
The papers in this special section were presented at the International Quantum Cascade Lasers School...
Quantum-cascade lasers based on a bound-to-continuum transition and emitting at lambda similar to 10...
Quantum-cascade lasers based on a bound-to-continuum transition and emitting at lambda similar to 10...
Quantum-cascade lasers based on a bound-to-continuum transition and emitting at lambda similar to 10...
By optimizing the molecule beam epitaxy growth condition, the quality of quantum cascade (QC) materi...