A coplanar X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate

This work presents a two-stage high-power amplifier monolithic microwave integrated circuit (MMIC) operating between 9 GHz and 11 GHz based on a fully integrated AlGaN/GaN high electron mobility transistor (HEMT) technology on s.i. SiC substrate and is suitable for radar applications. The MMIC device with a chip size of 4.5 x 3 mm2 yields a linear gain of 20 dB and a maximum pulsed saturated output power of 13.4 W at 10 GHz equivalent to 3.3 W/mm at V(ind DS) = 35 V, 10% duty cycle, and a gain compression level of 5 dB. Further, dc reliability data are given for the MMIC HEMT technology