Distributed amplifier MMICs with very large bandwidth were realized using an in-house InP/InGaAs Double Heterojunction Bipolar Transistor (DHBT) technology. A choice of two amplifiers is presented. The amplifiers achieve a 3-dB bandwidth of 85 GHz and 101 GHz and a gain of 10.5 dB and 9.5 dB, respectively. Both show an excellent input matching over the entire bandwidth and an output matching of better than -10 dB up to 85 GHz. The group delay, which is calculated from measured S-Parameters, is flat up to 80 GHz
An ultra broadband MMIC amplifier is designed using InP double-heterojunction bipolar transistors an...
In this paper, single-stage and multistage amplifiers of two different topologies, common-base with ...
In this paper, single-stage and multistage amplifiers of two different topologies, common-base with ...
This paper reports a state-of-the-art distributed amplifier intended for use in 100 Gbit/s optical c...
Two wideband amplifier MMICs are designed and tested. Both designs employ InP double-heterojunction ...
Two wideband amplifier MMICs are designed and tested. Both designs employ InP double-heterojunction ...
Three wideband amplifiers in double-heterojunction bipolar transistor technology have been designed ...
This paper compares three single-ended distributed amplifiers (DAs) realized in an in-house InP/InGa...
This work describes the development process of state-of-the-art electrical broadband amplifiers, whi...
This work describes the development process of state-of-the-art electrical broadband amplifiers, whi...
A distributed amplifier for use as a modulator driver in next generation optical data communication ...
Three wideband amplifiers in double-heterojunction bipolar transistor technology have been designed ...
This paper highlights the gain-bandwidth merit of the single stage distributed amplifier (SSDA) and ...
This paper presents a broadband amplifier MMIC based on 0.5 µm InP double-heterojunction bipolar tra...
Distributed amplifiers were fabricated successfully with a gain of 8 dB plusminus 1 dB in the freque...
An ultra broadband MMIC amplifier is designed using InP double-heterojunction bipolar transistors an...
In this paper, single-stage and multistage amplifiers of two different topologies, common-base with ...
In this paper, single-stage and multistage amplifiers of two different topologies, common-base with ...
This paper reports a state-of-the-art distributed amplifier intended for use in 100 Gbit/s optical c...
Two wideband amplifier MMICs are designed and tested. Both designs employ InP double-heterojunction ...
Two wideband amplifier MMICs are designed and tested. Both designs employ InP double-heterojunction ...
Three wideband amplifiers in double-heterojunction bipolar transistor technology have been designed ...
This paper compares three single-ended distributed amplifiers (DAs) realized in an in-house InP/InGa...
This work describes the development process of state-of-the-art electrical broadband amplifiers, whi...
This work describes the development process of state-of-the-art electrical broadband amplifiers, whi...
A distributed amplifier for use as a modulator driver in next generation optical data communication ...
Three wideband amplifiers in double-heterojunction bipolar transistor technology have been designed ...
This paper highlights the gain-bandwidth merit of the single stage distributed amplifier (SSDA) and ...
This paper presents a broadband amplifier MMIC based on 0.5 µm InP double-heterojunction bipolar tra...
Distributed amplifiers were fabricated successfully with a gain of 8 dB plusminus 1 dB in the freque...
An ultra broadband MMIC amplifier is designed using InP double-heterojunction bipolar transistors an...
In this paper, single-stage and multistage amplifiers of two different topologies, common-base with ...
In this paper, single-stage and multistage amplifiers of two different topologies, common-base with ...