Add to ORKGElectrically active defects in carbon-doped GaN layers were studied with a metal/carbon-doped GaN (GaN:C)/Si-doped GaN (GaN:Si) MIS structure. The GaN:C layers were grown with three different carbon doping concentrations (N-C). A semi-vertical metal/semi-insulator/n-type semiconductor (MIS) device was fabricated to perform deep-level transient spectroscopy (DLTS) measurements. Two electron traps E1 and E2 with energy level at E-C - (0.22-0.31) eV and E-C - (0.45-0.49) eV were observed. E1 and E2 are associated with a nitrogen vacancy V-N-related defect in the strain field of extended defects and a nitrogen antisite defect, respectively. By changing the reverse bias voltage of the DLTS measurement, the location and relative defect concentrat...
Deep levels in AlGaN/GaN heterostructures are known to be responsible for trapping processes like cu...
Deep centers in Si-doped n-GaN layers grown by reactive molecular beam epitaxy have been studied by ...
Deep centers in Si-doped n-GaN layers grown by reactive molecular beam epitaxy have been studied by ...
In this article, a metal/carbon-doped GaN (GaN:C)/Si-doped GaN (GaN:Si) structure was used to invest...
In this article, a metal/carbon-doped GaN (GaN:C)/Si-doped GaN (GaN:Si) structure was used to invest...
In this article, a metal/carbon-doped GaN (GaN:C)/Si-doped GaN (GaN:Si) structure was used to invest...
Electrical properties, including leakage currents, threshold voltages, and deep traps, of AlGaN/GaN ...
Electrical properties, including leakage currents, threshold voltages, and deep traps, of AlGaN/GaN ...
Electrical properties, including leakage currents, threshold voltages, and deep traps, of AlGaN/GaN ...
Abstract Carbon doping in GaN-on-Silicon (Si) epitaxial layers is an essential way to reduce leakage...
International audienceMany kinds of defects are present in AlGaN/GaN on Si based power electronics d...
The electrical conductivity and deep level spectrum of GaN grown by molecular beam epitaxy and codop...
The role of carbon-related traps in GaN-based ungated high-electron mobility transistor structures h...
We report on a correlation between C-related deep-level defects and turn-on recovery characteristics...
The first gallium nitride (GaN) crystal was grown by hydride vapor phase epitaxy in 1969 by Maruska ...
Deep levels in AlGaN/GaN heterostructures are known to be responsible for trapping processes like cu...
Deep centers in Si-doped n-GaN layers grown by reactive molecular beam epitaxy have been studied by ...
Deep centers in Si-doped n-GaN layers grown by reactive molecular beam epitaxy have been studied by ...
In this article, a metal/carbon-doped GaN (GaN:C)/Si-doped GaN (GaN:Si) structure was used to invest...
In this article, a metal/carbon-doped GaN (GaN:C)/Si-doped GaN (GaN:Si) structure was used to invest...
In this article, a metal/carbon-doped GaN (GaN:C)/Si-doped GaN (GaN:Si) structure was used to invest...
Electrical properties, including leakage currents, threshold voltages, and deep traps, of AlGaN/GaN ...
Electrical properties, including leakage currents, threshold voltages, and deep traps, of AlGaN/GaN ...
Electrical properties, including leakage currents, threshold voltages, and deep traps, of AlGaN/GaN ...
Abstract Carbon doping in GaN-on-Silicon (Si) epitaxial layers is an essential way to reduce leakage...
International audienceMany kinds of defects are present in AlGaN/GaN on Si based power electronics d...
The electrical conductivity and deep level spectrum of GaN grown by molecular beam epitaxy and codop...
The role of carbon-related traps in GaN-based ungated high-electron mobility transistor structures h...
We report on a correlation between C-related deep-level defects and turn-on recovery characteristics...
The first gallium nitride (GaN) crystal was grown by hydride vapor phase epitaxy in 1969 by Maruska ...
Deep levels in AlGaN/GaN heterostructures are known to be responsible for trapping processes like cu...
Deep centers in Si-doped n-GaN layers grown by reactive molecular beam epitaxy have been studied by ...
Deep centers in Si-doped n-GaN layers grown by reactive molecular beam epitaxy have been studied by ...