In order to establish economic coating technologies for mass-produced materials, the widely used, microwave plasma-enhanced (PE) CVD technology has been extended to atmospheric pressure operation. Microwave plasma activation substantially widens the range of potential applications compared to conventional atmospheric CVD, because it is capable of processing temperature-sensitive substrates. A cylinder-type microwave cavity was scaled-up to different working diameters. The half-meter range has already been achieved, and further scale-up potential can be demonstrated. The microwave source offers access to a spatially extended, homogeneous, stable, non-thermal plasma, even in the downstream region. A range of gases can be used for plasma excit...
Amorphous carbon films were obtained by remote microwave plasma enhanced chemical vapour deposition ...
Microwave plasma (MWP) technology is currently being used in application fields such as semiconducto...
Abstract: It is now generally accepted that the frequency d27c at which a high frequency (HF) discha...
The present paper is focused on coating technologies compatible with industrial requirements, partic...
A new type of DC-powered plasma source (LARGE) was developed and evaluated for continuous plasma-enh...
Silicon oxide is deposited by remote microwave plasma enhanced chemical vapour deposition (RMPECVD)....
Silicon oxide is deposited by remote microwave plasma enhanced chemical vapour deposition (RMPECVD)....
Atmospheric microwave discharge easily generates plasma at a microwave power of not more than 1kw. L...
Abstract: Silicon oxide is deposited by remote microwave plasma enhanced chemical vapour deposition ...
DE 19944071 A UPAB: 20000508 NOVELTY - Plasma-chemical deposition involves using a microwave gas dis...
Plasma processing is the mainstay of semiconductor materials processing. As critical dimension sizes...
In a large scale plasma reactor, a high microwave power of 1600 W is necessary to obtain a homogeneo...
This thesis deals with the modelling of various microwave produced plasmas that are in use for the p...
Amorphous carbon films were obtained by remote microwave plasma enhanced chemical vapour deposition ...
Plasma processing is the mainstay of semiconductor materials processing. As critical dimension sizes...
Amorphous carbon films were obtained by remote microwave plasma enhanced chemical vapour deposition ...
Microwave plasma (MWP) technology is currently being used in application fields such as semiconducto...
Abstract: It is now generally accepted that the frequency d27c at which a high frequency (HF) discha...
The present paper is focused on coating technologies compatible with industrial requirements, partic...
A new type of DC-powered plasma source (LARGE) was developed and evaluated for continuous plasma-enh...
Silicon oxide is deposited by remote microwave plasma enhanced chemical vapour deposition (RMPECVD)....
Silicon oxide is deposited by remote microwave plasma enhanced chemical vapour deposition (RMPECVD)....
Atmospheric microwave discharge easily generates plasma at a microwave power of not more than 1kw. L...
Abstract: Silicon oxide is deposited by remote microwave plasma enhanced chemical vapour deposition ...
DE 19944071 A UPAB: 20000508 NOVELTY - Plasma-chemical deposition involves using a microwave gas dis...
Plasma processing is the mainstay of semiconductor materials processing. As critical dimension sizes...
In a large scale plasma reactor, a high microwave power of 1600 W is necessary to obtain a homogeneo...
This thesis deals with the modelling of various microwave produced plasmas that are in use for the p...
Amorphous carbon films were obtained by remote microwave plasma enhanced chemical vapour deposition ...
Plasma processing is the mainstay of semiconductor materials processing. As critical dimension sizes...
Amorphous carbon films were obtained by remote microwave plasma enhanced chemical vapour deposition ...
Microwave plasma (MWP) technology is currently being used in application fields such as semiconducto...
Abstract: It is now generally accepted that the frequency d27c at which a high frequency (HF) discha...