Short-wavelength (lambda < 4 µm) GaInAs-AlAsSb quantum cascade (QC) lasers have been demonstrated using a "bound-to-continuum" design for the purpose of reducing the electric injection power density. As a result, we have reduced the low-temperature electric injection power density of the lasers by 40%, compared to that of GaInAs-AlAsSb QC lasers emitting at the same wavelength but adopting a triple-quantum-well design. The lasers in the present report can operate up to room temperature (300 K) in pulsed mode, emitting at short-wavelength lambda about 3.7 - 3.9 µm
Quantum cascade (QC) lasers are a fundamentally new semiconductor laser source designed by methods o...
International audienceWe report low threshold InAs/AlSb quantum cascade lasers emitting near 15 micr...
The realization of the first noncascaded intersubband injection lasers based on a single optical tra...
We discuss the possible limitations on realizing short-wavelength GaInAs/AlAsSb quantum-cascade lase...
At present GaInAs/AlInAs based quantum cascade (QC) lasers represent the state-of-the-art with respe...
Above room-temperature (T>=400 K) operation of GaInAs/AlAsSb-based quantum-cascade lasers has been d...
Short-wavelength (lambda about 4 µm) single-mode distributed-feedback GaInAs/AlAsSb quantum-cascade ...
Quantum-cascade lasers based on a bound-to-continuum transition and emitting at lambda similar to 10...
Recent advances and new directions in quantum cascade (QC) lasers are discussed in this paper. Inven...
Quaternary-barrier-containing GaInAs/A1GaAsSb quantum-cascade lasers, motivated by reducing the barr...
We report on the realization of GaAs/AlGaAs quantum cascade lasers with an emission wavelength of 9....
Quantum cascade (QC) lasers emitting at lambda approximate to 8 mu m with a power performance equal ...
We present the status of quantum-cascade lasers without injector regions, based on a four- and five-...
International audienceWe review the current state of the InAs/AlSb quantum cascade laser (QCL) techn...
Discrete-mode quantum-cascade lasers have been developed in the InGaAs-AlAsSb-InP materials system. ...
Quantum cascade (QC) lasers are a fundamentally new semiconductor laser source designed by methods o...
International audienceWe report low threshold InAs/AlSb quantum cascade lasers emitting near 15 micr...
The realization of the first noncascaded intersubband injection lasers based on a single optical tra...
We discuss the possible limitations on realizing short-wavelength GaInAs/AlAsSb quantum-cascade lase...
At present GaInAs/AlInAs based quantum cascade (QC) lasers represent the state-of-the-art with respe...
Above room-temperature (T>=400 K) operation of GaInAs/AlAsSb-based quantum-cascade lasers has been d...
Short-wavelength (lambda about 4 µm) single-mode distributed-feedback GaInAs/AlAsSb quantum-cascade ...
Quantum-cascade lasers based on a bound-to-continuum transition and emitting at lambda similar to 10...
Recent advances and new directions in quantum cascade (QC) lasers are discussed in this paper. Inven...
Quaternary-barrier-containing GaInAs/A1GaAsSb quantum-cascade lasers, motivated by reducing the barr...
We report on the realization of GaAs/AlGaAs quantum cascade lasers with an emission wavelength of 9....
Quantum cascade (QC) lasers emitting at lambda approximate to 8 mu m with a power performance equal ...
We present the status of quantum-cascade lasers without injector regions, based on a four- and five-...
International audienceWe review the current state of the InAs/AlSb quantum cascade laser (QCL) techn...
Discrete-mode quantum-cascade lasers have been developed in the InGaAs-AlAsSb-InP materials system. ...
Quantum cascade (QC) lasers are a fundamentally new semiconductor laser source designed by methods o...
International audienceWe report low threshold InAs/AlSb quantum cascade lasers emitting near 15 micr...
The realization of the first noncascaded intersubband injection lasers based on a single optical tra...