This work presents a large signal characterization of a high power GaN/AIGaN HEMT transistor utilizing a harmonic load pull setup. Two different methods for passive automated tuners have been compared to synthesize the load impedances
In this work, we present the characterization results for several HEMT GaN-based devices developed b...
HEMT devices based on AlGaN/GaN heterostructures exhibit constantly improving power performances. No...
This paper presents a rigorous way to quantify the role played by higher baseband impedances in det...
Active harmonic loadpull measurements investigation for a 1-mm AlGaN/GaN HEMT power transistor at X-...
In this paper, the efficiency of a GaN HEMT transistor and its intrinsic waveforms are measured at 0...
This paper presents the source/load-pull characterisation of GaN HEMTs on Si substrate, with an anal...
Gallium Nitride based devices due to their inherent material properties are considered as one of the...
Wide bandgap devices such as AlGaN/GaN high electron mobility transistors (HEMTs) have emerged as a ...
High-power devices (>30W) require low load impedances (<5?) for optimum power performance. In presen...
In this paper, a design of a GaN HEMT power amplifier using output matching circuit with arbitrary h...
In this paper the nonlinear model of a GaN transistor is extracted starting from dynamic bias measur...
In this paper the nonlinear model of a GaN transistor is extracted starting from dynamic bias measur...
International audienceRF GaN power technologies are emerging for future equipment in the defence, sp...
In this work, we present the characterization results for several HEMT GaN-based devices developed b...
In this work, we present the characterization results for several HEMT GaN-based devices developed b...
HEMT devices based on AlGaN/GaN heterostructures exhibit constantly improving power performances. No...
This paper presents a rigorous way to quantify the role played by higher baseband impedances in det...
Active harmonic loadpull measurements investigation for a 1-mm AlGaN/GaN HEMT power transistor at X-...
In this paper, the efficiency of a GaN HEMT transistor and its intrinsic waveforms are measured at 0...
This paper presents the source/load-pull characterisation of GaN HEMTs on Si substrate, with an anal...
Gallium Nitride based devices due to their inherent material properties are considered as one of the...
Wide bandgap devices such as AlGaN/GaN high electron mobility transistors (HEMTs) have emerged as a ...
High-power devices (>30W) require low load impedances (<5?) for optimum power performance. In presen...
In this paper, a design of a GaN HEMT power amplifier using output matching circuit with arbitrary h...
In this paper the nonlinear model of a GaN transistor is extracted starting from dynamic bias measur...
In this paper the nonlinear model of a GaN transistor is extracted starting from dynamic bias measur...
International audienceRF GaN power technologies are emerging for future equipment in the defence, sp...
In this work, we present the characterization results for several HEMT GaN-based devices developed b...
In this work, we present the characterization results for several HEMT GaN-based devices developed b...
HEMT devices based on AlGaN/GaN heterostructures exhibit constantly improving power performances. No...
This paper presents a rigorous way to quantify the role played by higher baseband impedances in det...
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