Add to ORKGDielectric barrier discharge (DBD) treatment of silicon wafers as an activation step prior to direct wafer bonding is known to yield reasonable bond strengths already at low annealing temperatures. Different models and ideas to explain the effects of low-pressure plasma pretreatments have already been published, but so far there is few experimental material on surface modifications caused by an atmospheric-pressure DBD plasma activation. This publication presents the results of FTIR and XPS measurements on wafers which went through a standard RCA cleaning procedure and were subsequently treated in DBDs using different gases
This paper presents results of investigations of defect formation during annealing of silicon wafer ...
The procedure of low temperature silicon direct bonding (LTSDB) was investigated by bonding surface ...
The effect of argon plasma treatment prior to hydrophobic bonding of silicon wafers was investigated...
The individual effects of an atmospheric-pressure dielectric barrier discharge (DBD) treatment in ox...
The surface activation of silicon wafers with a dielectric barrier discharge (DBD) for direct bondin...
Silicon wafers were exposed to a dielectric barrier discharge (DBD) at atmospheric pressure, which w...
Using dielectric barrier discharges at atmospheric pressure, silicon wafers have been treated for lo...
Wafer level packaging using silicon direct bonding is widely used for the production of Microsystems...
O2 is an innovative activation method for low-temperature direct Si wafer bonding. Plasma-treated Si...
We investigated the effects of exposing silicon wafer surfaces to direct or afterglow Ar-H2 plasmas ...
Two new atmospheric-pressure plasma processes, Local Plasma Treatment (LPT) and Plasma Printing (PP)...
Low-temperature bonding of Si wafers has been studied utilizing reactive ion etching-mode plasma act...
Low temperature bonding of Si wafers has been studied utilizing RIE-mode plasma activation. The hydr...
This paper presents the results of surface energy measurements performed in situ during annealing of...
This paper reports on plasma-enhanced bonding of optics surfaces coated with highly sensitive functi...
This paper presents results of investigations of defect formation during annealing of silicon wafer ...
The procedure of low temperature silicon direct bonding (LTSDB) was investigated by bonding surface ...
The effect of argon plasma treatment prior to hydrophobic bonding of silicon wafers was investigated...
The individual effects of an atmospheric-pressure dielectric barrier discharge (DBD) treatment in ox...
The surface activation of silicon wafers with a dielectric barrier discharge (DBD) for direct bondin...
Silicon wafers were exposed to a dielectric barrier discharge (DBD) at atmospheric pressure, which w...
Using dielectric barrier discharges at atmospheric pressure, silicon wafers have been treated for lo...
Wafer level packaging using silicon direct bonding is widely used for the production of Microsystems...
O2 is an innovative activation method for low-temperature direct Si wafer bonding. Plasma-treated Si...
We investigated the effects of exposing silicon wafer surfaces to direct or afterglow Ar-H2 plasmas ...
Two new atmospheric-pressure plasma processes, Local Plasma Treatment (LPT) and Plasma Printing (PP)...
Low-temperature bonding of Si wafers has been studied utilizing reactive ion etching-mode plasma act...
Low temperature bonding of Si wafers has been studied utilizing RIE-mode plasma activation. The hydr...
This paper presents the results of surface energy measurements performed in situ during annealing of...
This paper reports on plasma-enhanced bonding of optics surfaces coated with highly sensitive functi...
This paper presents results of investigations of defect formation during annealing of silicon wafer ...
The procedure of low temperature silicon direct bonding (LTSDB) was investigated by bonding surface ...
The effect of argon plasma treatment prior to hydrophobic bonding of silicon wafers was investigated...