Temperature- and injection-dependent photoluminescence lifetime spectroscopy

The investigation of the parameters of defects in monocrystalline silicon requires accurate lifetime measurements in a wide injection range. In addition, the ability to measure these injection-dependent lifetimes at different temperatures is of great benefit. Two examples of commonly used measurement approaches are the microwave-detected photoconductance decay technique (u W-PCD) and the quasi-steady-state photoconductance technique (QSS-PC). Recently a new approach to measure the injection-dependent lifetime has emerged: The quasi-steady-state photoluminescence technique (QSS-PL). In this paper the capabilities and restrictions in terms of defect analysis of these techniques will be analysed and compared. First measurements of temperature- and injection-dependent lifetime measurements using the photoluminescence technique (TI-PL) on titanium-contaminated samples are presented