220 GHz low-noise amplifier MMICs and modules based on a high performance 50 nm metamorphic HEMT technology

A metamorphic composite-channel InAlAs/InGaAs based high electron mobility transistor (MHEMT) technology has been developed for active and passive high-resolution imaging applications. The technology features 50 nm gate length in combination with an In content of 80 % in the main channel and 53 % in the second channel. An extrinsic transit frequency f(ind t) of 400 GHz and an extrinsic maximum transconductance g(ind m,max) of 1800 mS/mm were measured at a drain voltage of 1 V. Based on this advanced MHEMT technology, coplanar G-band low-noise amplifier (LNA) MMICs were realized, achieving a small-signal gain of more than 15 dB between 192 and 230 GHz together with an average noise figure of 8 dB. Furthermore, mounting and packaging of the monolithic amplifier chips into G-band waveguide modules was accomplished with only minor reduction in circuit performance