DE 102007056992 A1 UPAB: 20090609 NOVELTY - The method involves forming a layer sequence on a topography i.e. substrate (1) with an elevation (1a), for covering the substrate, where the sequence has a lower layer, a layer to be structured e.g. dielectric layer, and an upper masking layer. The layers are selected such that the layer to be structured is selectively etched towards the masking layer. An opening with sub micrometer dimensions is formed in the masking layer using energy beam. The structured layer is selectively etched through the opening for producing a submicrometer structure. The masking layer is removed afterwards. USE - Method for producing submicrometer structures on a topography i.e. substrate, for structuring of scanning o...