LaF3 thin films of different thicknesses were deposited on CaF2 (111) and silicon substrates at a relatively low substrate temperature of 150 °C. Optical (transmittance, reflectance, refractive index, and extinction coefficient) and mechanical (morphology and crystalline structure) properties have been investigated and are discussed. It is shown that LaF3 thin films deposited on CaF2 (111) substrates are monocrystalline and have a bulklike dense structure. Furthermore, it is presented that low-loss LaF3 thin films can be deposited not only by boat evaporation but also by electron beam evaporation
LaTiO3 films were prepared under various deposition temperatures using electron beam evaporation on ...
Impurity contents of loosely packed CaF2 and LaF3 films are analysed by SNMS depth-profiling. On the...
A novel atomic layer deposition process for the preparation of fluoride thin films in a temperature ...
LaF3 thin films of different thicknesses were deposited on CaF2 (111) and silicon substrates by boat...
This study characterizes thin films of eleven lanthanide trifluorides which are potentially useful f...
LaF3 thin films were prepared by thermal boat evaporation at different substrate temperatures and va...
ArF lithography technology requires minimization of optical losses due to scattering and absorption....
LaF3 films in the 5 1240 nm thickness range were grown on Si(111) by molecular beam epitaxy. The sub...
Since excimer laser applications extend to deep and vacuum UV wavelengths at 248 nm, 193 nm and 157 ...
Single layers of MgF2 and LaF3 were deposited upon superpolished fused-silica and CaF2 substrates by...
As a result of health and safety issues surrounding the use of radioactive materials on coated optic...
In the thickness range 50-500 nm at substrate temperatures of 300, 375 and 575 K the structures of p...
The present candidates for low loss dielectric optical coatings at VUV excimer laser wavelengths are...
The structure evolution characteristics of MgF2 and NdF3 optical thin films on CaF2 (111) substrates...
The potential of MBE rare-earth-doped LaF3 thin films in the IR region has been previously reported ...
LaTiO3 films were prepared under various deposition temperatures using electron beam evaporation on ...
Impurity contents of loosely packed CaF2 and LaF3 films are analysed by SNMS depth-profiling. On the...
A novel atomic layer deposition process for the preparation of fluoride thin films in a temperature ...
LaF3 thin films of different thicknesses were deposited on CaF2 (111) and silicon substrates by boat...
This study characterizes thin films of eleven lanthanide trifluorides which are potentially useful f...
LaF3 thin films were prepared by thermal boat evaporation at different substrate temperatures and va...
ArF lithography technology requires minimization of optical losses due to scattering and absorption....
LaF3 films in the 5 1240 nm thickness range were grown on Si(111) by molecular beam epitaxy. The sub...
Since excimer laser applications extend to deep and vacuum UV wavelengths at 248 nm, 193 nm and 157 ...
Single layers of MgF2 and LaF3 were deposited upon superpolished fused-silica and CaF2 substrates by...
As a result of health and safety issues surrounding the use of radioactive materials on coated optic...
In the thickness range 50-500 nm at substrate temperatures of 300, 375 and 575 K the structures of p...
The present candidates for low loss dielectric optical coatings at VUV excimer laser wavelengths are...
The structure evolution characteristics of MgF2 and NdF3 optical thin films on CaF2 (111) substrates...
The potential of MBE rare-earth-doped LaF3 thin films in the IR region has been previously reported ...
LaTiO3 films were prepared under various deposition temperatures using electron beam evaporation on ...
Impurity contents of loosely packed CaF2 and LaF3 films are analysed by SNMS depth-profiling. On the...
A novel atomic layer deposition process for the preparation of fluoride thin films in a temperature ...